Browsing by author "Martino, Joao Antonio"

A new method for determining the front and back interface trap densities of accumulation mode SOI MOSFETs at 77K

Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (1995)

A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K

Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (2000)

A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs at 300K

Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (2000)

A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices

Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (2001)

A novel simple method to extract the effective LDD doping concentration on fully depleted SOI nMOSFET

Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (1999)

Analog parameters of solid source Zn diffusion InXGa1-XAs nTFETs down to 10K

Mendes Bordallo, Caio Cesar; Martino, Joao Antonio; Agopian, Paula Ghedini; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Smets, Quentin; Simoen, Eddy; Claeys, Cor; Collaert, Nadine (2016)

Analog performance of vertical nanowireTFETs as a function of temperature and transport mechanism

Dalle Valle Martino, Marcio; Neves Souza, Felipe; Ghedini der Agopian, Paula; Martino, Joao Antonio; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2015)

Analysis of the back gate voltage on the LDD SOI NMOSFET series resistance

Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (1999)

Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs

Pavanello, Marcelo Antonio; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (2007)

Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (1998)

Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K

Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (1998)

Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K

Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (2000)

Behavior of triple-gate bulk FinFETs with and without DTMOS operation

Cano de Andrade, Gloria; Martino, Joao Antonio; Aoulaiche, Marc; Collaert, Nadine; Simoen, Eddy; Claeys, Cor (2012)

Combined Delta L and series resistance extraction of LDD MOSFETs at 77K

Schreutelkamp, Rob; Martino, Joao Antonio; Simoen, Eddy; Deferm, Ludo; Claeys, Cor (1995)

Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures

Vinicius de Oliveira, Alberto; Agopian, Paula Ghedini Der; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor; Collaert, Nadine; Thean, Aaron (2016)