Browsing by imec author "53685eeb9344a9e9e8b1118f601b2c9bcc64a2aa"
Now showing items 1-20 of 42
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Active area dependence of optoelectronic characteristics of perovskite LEDs
Goldberg, Iakov; Qiu, Weiming; Elkhouly, Karim; Annavarapu, Nirav; Nalin Mehta, Ankit; Rolin, Cedric; Ke, Tung Huei; Gehlhaar, Robert; Genoe, Jan; Heremans, Paul (2021) -
Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation
Schoenaers, Ben; Leonhardt, Alessandra; Nalin Mehta, Ankit; Stesmans, Andre; Chiappe, Daniele; Asselberghs, Inge; Radu, Iuliana; Huyghebaert, Cedric; De Gendt, Stefan; Houssa, Michel; Afanas'ev, Valeri V. (2020) -
Assessing the prospects of atomic layer deposition for two-dimensional materials in microelectronic applications
Groven, Benjamin; Tomczak, Yoann; Nalin Mehta, Ankit; Bender, Hugo; Zhang, Haodong; Schram, Tom; Smets, Quentin; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Delabie, Annelies (2018) -
Chemical vapor deposition of 2D tin sulfides using SnCl4 and H2S
Zhang, Haodong; Balaji, Yashwanth; Nalin Mehta, Ankit; Caymax, Matty; Radu, Iuliana; Vandervorst, Wilfried; Delabie, Annelies (2018) -
Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface
Kandybka, Iryna; Groven, Benjamin; Medina Silva, Henry; Sergeant, Stefanie; Nalin Mehta, Ankit; Koylan, Serkan; Shi, Yuanyuan; Banerjee, Sreetama; Morin, Pierre; Delabie, Annelies (2024) -
Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low temperature
Groven, Benjamin; Claes, Dieter; Nalin Mehta, Ankit; Bender, Hugo; Vandervorst, Wilfried; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Delabie, Annelies (2019) -
Direct Assessment of Defective Regions in Monolayer MoS<sub>2</sub> Field-Effect Transistors through <i>In Situ</i> Scanning Probe Microscopy Measurements
Minj, Albert; Koladi Mootheri, Vivek; Banerjee, Sreetama; Nalin Mehta, Ankit; Serron, Jill; Hantschel, Thomas; Asselberghs, Inge; Goux, Ludovic; Kar, Gouri Sankar; Heyns, Marc; Lin, Dennis (2024) -
Effects of buried grain boundaries in multilayer MoS2
Ludwig, Jonathan; Nalin Mehta, Ankit; Mascaro, Marco; Celano, Umberto; Chiappe, Daniele; Bender, Hugo; Vandervorst, Wilfried; Paredis, Kristof (2019) -
Electrical atomic force microscopy for 2D transition metal dichalcogenide materials
Celano, Umberto; Virkki, Olli; Mascaro, Marco; Nalin Mehta, Ankit; Bender, Hugo; Chiappe, Daniele; Asselberghs, Inge; Paredis, Kristof; Hoflijk, Ilse; Franquet, Alexis; Huyghebaert, Cedric; Radu, Iuliana; Vandervorst, Wilfried (2017) -
Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics
Shi, Yuanyuan; Groven, Benjamin; Serron, Jill; Wu, Xiangyu; Nalin Mehta, Ankit; Minj, Albert; Sergeant, Stefanie; Han, Han; Asselberghs, Inge; Lin, Dennis; Brems, Steven; Huyghebaert, Cedric; Morin, Pierre; Radu, Iuliana; Caymax, Matty (2021) -
Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy
Mortelmans, Wouter; El Kazzi, Salim; Groven, Benjamin; Nalin Mehta, Ankit; Balaji, Yashwanth; De Gendt, Stefan; Heyns, Marc; Merckling, Clement (2020) -
Extreme scaling enabled by MX2 transistors: variability challenges (invited)
Smets, Quentin; Arutchelvan, Goutham; Schram, Tom; Verreck, Devin; Groven, Benjamin; Cott, Daire; Ahmed, Zubair; Shi, Yuanyuan; Sutar, Surajit; Nalin Mehta, Ankit; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana (2021) -
Formation mechanism of 2D SnS2 and SnS by chemical vapor deposition using SnCl4 and H2S
Zhang, Haodong; Balaji, Yashwanth; Nalin Mehta, Ankit; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Vandervorst, Wilfried; Delabie, Annelies (2018) -
Formation mechanism of 2D SnS2 bycvd using SnCl4 and H2S
Zhang, Haodong; Balaji, Yashwanth; Nalin Mehta, Ankit; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Vandervorst, Wilfried; Delabie, Annelies (2018) -
Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2
Mortelmans, Wouter; Nalin Mehta, Ankit; Balaji, Yashwanth; El Kazzi, Salim; Sergeant, Stefanie; Houssa, Michel; De Gendt, Stefan; Heyns, Marc; Merckling, Clement (2020) -
Grain-boundary-induced strain and distortion in epitaxial bilayer MoS2 lattice
Nalin Mehta, Ankit; Mo, Jiongjiong; Pourtois, Geoffrey; Dabral, Ashish; Groven, Benjamin; Bender, Hugo; Favia, Paola; Caymax, Matty; Vandervorst, Wilfried (2020) -
High-Density Patterning of InGaZnO by CH4: a Comparative Study of RIE and Pulsed Plasma ALE
Kundu, Shreya; Decoster, Stefan; Bezard, Philippe; Nalin Mehta, Ankit; Dekkers, Harold; Lazzarino, Frederic (2022-07-19) -
Importance of the substrate' s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides
Mo, Jiongjiong; El Kazzi, Salim; Mortelmans, Wouter; Nalin Mehta, Ankit; Sergeant, Stefanie; Smets, Quentin; Asselberghs, Inge; Huyghebaert, Cedric (2020) -
Increased WS2 crystal grain size by controlling the nucleation behavior during plasma enhanced atomic layer deposition
Groven, Benjamin; Nalin Mehta, Ankit; Bender, Hugo; Meersschaut, Johan; Conard, Thierry; Franquet, Alexis; Nuytten, Thomas; Vandervorst, Wilfried; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Delabie, Annelies (2018) -
Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity
Chiappe, Daniele; Ludwig, Jonathan; Leonhardt, Alessandra; El Kazzi, Salim; Nalin Mehta, Ankit; Nuytten, Thomas; Celano, Umberto; Sutar, Surajit; Pourtois, Geoffrey; Caymax, Matty; Paredis, Kristof; Vandervorst, Wilfried; Lin, Dennis; De Gendt, Stefan; Barla, Kathy; Huyghebaert, Cedric; Asselberghs, Inge; Radu, Iuliana (2018)