Browsing by author "Scappucci, Giordano"
Now showing items 1-5 of 5
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Ga-doped Ge and [B + Ga] Co-doped SiGe epitaxial source-drain for Sub-7 nm logic devices
Porret, Clément; Margetis, Joe; Tolle, John; Sammak, Amir; Scappucci, Giordano; Petersen Barbosa Lima, Lucas; Kohen, David; Kunert, Bernardette; Hikavyy, Andriy; Loo, Roger (2018) -
Photoluminescence of phosphorus atomic layer doped Ge grown on Si
Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Wilfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd (2017) -
Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
Porret, Clément; Hikavyy, Andriy; Gomez Granados, Juan Fernando; Baudot, Sylvain; Vohra, Anurag; Kunert, Bernardette; Douhard, Bastien; Bogdanowicz, Janusz; Schaekers, Marc; Kohen, David; Margetis, Joe; Tolle, John; Petersen Barbosa Lima, Lucas; Sammak, Amir; Scappucci, Giordano; Rosseel, Erik; Langer, Robert; Loo, Roger (2018) -
Very low temperature epitaxy of group-IV semiconductors for use in finFET, stacked nanowires and monolithic 3D integration
Porret, Clément; Hikavyy, Andriy; Gomez Granados, Juan Fernando; Baudot, Sylvain; Vohra, Anurag; Kunert, Bernardette; Douhard, Bastien; Bogdanowicz, Janusz; Schaekers, Marc; Kohen, David; Margetis, Joe; Tolle, John; Petersen Lima, Lucas; Sammak, Amir; Scappucci, Giordano; Rosseel, Erik; Langer, Robert; Loo, Roger (2018) -
Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
Porret, Clément; Hikavyy, Andriy; Gomez Granados, Fernando; Baudot, Sylvain; Vohra, Anurag; Kunert, Bernardette; Douhard, Bastien; Bogdanowicz, Janusz; Schaekers, Marc; Kohen, David; Margetis, Joe; Tolle, John; Petersen Lima, Lucas; Sammak, Amir; Scappucci, Giordano; Rosseel, Erik; Langer, Robert; Loo, Roger (2019)