Browsing by author "Martin-Martinez, Javier"
Now showing items 1-13 of 13
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A conductive AFM nanoscale analysis of NBTI and channel hot-carriers degradation in MOSFETs
Wu, Qian; Bayerl, A.; Porti, Marc; Martin-Martinez, Javier; Lanza, Mario; Rodiguez, Rosanna; Velayudhan, Vikas; Nafria, Montserrat; Aymerich, Xavier; Gonzalez, Mireia B; Simoen, Eddy (2014) -
An equivalent circuit model for the recovery component of BTI
Martin-Martinez, Javier; Rodriguez, Rosana; Nafria, Montserat; Aymerich, X.; Kaczer, Ben; Groeseneken, Guido (2008-09) -
Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
Martin-Martinez, Javier; Diaz Fortuny, Javier; Saraza Canflanca, Pablo; Rodriguez, Rosana; Castro-Lopez, Rafael; Roca, Elisenda; Fernandez, Francisco V.; Nafria, Montserrat (2023) -
Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale
Bayerl, A.; Porti, Marc; Martin-Martinez, Javier; Lanza, M.; Rodriguez, Rosanna; Velayudhan, V.; Amat, Esteve; Nafria, Montse; Aymerich, X.; Gonzalez, Mireia B; Simoen, Eddy (2013) -
Channel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approach
Wu, Qian; Porti, Marc; Bayerl, Albin; Martin-Martinez, Javier; Rodriguez, Rosana; Nafria, Montserrat; Aymerich, Xavier; Simoen, Eddy (2015) -
Circuit design-oriented stochastic piecewise modeling of the postbreakdown gate current in MOSFETs: application to ring oscilators
Martin-Martinez, Javier; Kaczer, Ben; Degraeve, Robin; Roussel, Philippe; Rodriguez, Rosana; Nafria, Monserrat; Aymerich, X.; Dierickx, Bart; Groeseneken, Guido (2012) -
Circuit-design oriented modelling of the recovery BTI component and post-BD gate currents
Martin-Martinez, Javier; Kaczer, Ben; Boix, J.; Ayala, N.; Rodriguez, Rosana; Nafria, Montserrat; Aymerich, X.; Zuber, Paul; Dierickx, Bart; Groeseneken, Guido (2009-02) -
NBTI from the perspective of defect states with widely distributed time scales
Kaczer, Ben; Grasser, Tibor; Martin-Martinez, Javier; Simoen, Eddy; Aoulaiche, Marc; Roussel, Philippe; Groeseneken, Guido (2009-04) -
Negative bias temperature instability in devices with millisecond annealed ultra-shallow junctions
Moras, Miquel; Martin-Martinez, Javier; Rodriguez, Rosanna; Nafria, Montse; Aymerich, Xavier; Simoen, Eddy (2013) -
Probabilistic defect occupancy model for NBTI
Martin-Martinez, Javier; Kaczer, Ben; Toledano Luque, Maria; Rodriguez, Rosana; Nafria, Monserat; Aymerich, X.; Groeseneken, Guido (2011-04) -
Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions
Saraza-Canflanca, Pablo; Rodriguez, Rosana; Martin-Martinez, Javier; Castro-Lopez, Rafael; Roca, Elisenda; V. Fernandez, Fancisco; Nafria, Montserrat; Diaz Fortuny, Javier (2021) -
Stochastic piecewise modeling of post-BD gate current oriented to circuit design
Martin-Martinez, Javier; Kaczer, Ben; Ayala, N; Rodriguez, Rosana; Nafria, Montserrat; Aymerich, X; Zuber, Paul; Dierickx, Bart (2008) -
Ubiquitous relaxation in BTI stressing - new evaluation and insights
Kaczer, Ben; Grasser, Tibor; Roussel, Philippe; Martin-Martinez, Javier; O'Connor, Robert; O'Sullivan, Barry; Groeseneken, Guido (2008-04)