Browsing by author "Boeykens, Steven"
Now showing items 1-15 of 15
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AlGaN/GaN HEMT : when MOVPE meets the device challenge
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Cheng, Kai; Degroote, Stefan; Derluyn, Joff; Das, Johan; Vandersmissen, Raf; Wang, Wenfei; Xiao, Dongping; Borghs, Gustaaf (2005) -
AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
Cheng, Kai; Leys, Maarten; Derluyn, Joff; Degroote, Stefan; Xiao, Dongping; Lorenz, Anne; Boeykens, Steven; Germain, Marianne; Borghs, Gustaaf (2007-01) -
AlGaN/GaN HEMT: the growth challenge
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Moerman, Ingrid; Borghs, Gustaaf (2002) -
ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT
Germain, Marianne; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Boeykens, Steven; Derluyn, Joff; Das, Johan; Ruythooren, Wouter; Vandersmissen, Raf; Schreurs, Dominique; Wang, Wenfei; Xiao, Dongping; Borghs, Gustaaf (2005) -
Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure
Wang, Wenfei; Derluyn, Joff; Germain, Marianne; De Wolf, Ingrid; Leys, Maarten; Boeykens, Steven; Degroote, Stefan; Ruythooren, Wouter; Das, Johan; Schreurs, Dominique; Nauwelaers, Bart; Borghs, Gustaaf (2005) -
Correlation of transport and structural properties in AlGaN/GaN HEMT: Strain modification by means of AlN interlayers
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Ruythooren, Wouter; Schreurs, Dominique; Choi, Kang-Hoon; Borghs, Gustaaf; Van Daele, Benny; Van Tendeloo, Gustaaf; Farvacque, Jean-Louis; Carosella, Francesca (2003) -
Crack-free GaN Grown on Si(111) by MOVPE by introducing Step-Graded AlGaN Buffer Layers
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Boeykens, Steven; Derluyn, Joff; Germain, Marianne; Engelen, Jan; Borghs, Gustaaf (2005) -
Deep defects in GaN/AlGaN/SiC heterostructures
Kindl, D.; Hubik, P.; Kristofik, J.; Mares, J.J.; Vyborny, Z.; Leys, Maarten; Boeykens, Steven (2009) -
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Degroote, Stefan; Wang, Wenfei; Schreurs, Dominique; Ruythooren, Wouter; Choi, Kang-Hoon; Van Daele, B.; Van Tendeloo, G.; Borghs, Gustaaf (2004-12) -
High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation
Germain, Marianne; Derluyn, Joff; Xiao, Dongping; Vandersmissen, Raf; Das, Johan; Wang, Wenfei; Boeykens, Steven; Leys, Maarten; Degroote, Stefan; Ruythooren, Wouter; Borghs, Gustaaf (2004) -
Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 layer
Derluyn, Joff; Boeykens, Steven; Cheng, Kai; Vandersmissen, Raf; Das, Johan; Ruythooren, Wouter; Degroote, Stefan; Leys, Maarten; Germain, Marianne; Borghs, Gustaaf (2005-09) -
Improvement of ohmic contacts on AlGaN/GaN HEMT's by using in-situ Si3N4 passivation layer
Derluyn, Joff; Van Daele, Benny; Boeykens, Steven; Cheng, Kai; Ruythooren, Wouter; Leys, Maarten; Germain, Marianne; Van Tendeloo, Gustaaf; Borghs, Gustaaf (2005-06) -
Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC
Boeykens, Steven; Leys, Maarten; Germain, Marianne; Belmans, Ronnie; Borghs, Gustaaf (2004-12) -
MOVPE AlGaN/AlN/GaN HEMT with in-situ passivation
Germain, Marianne; Ruythooren, Wouter; Leys, Maarten; Derluyn, Joff; Das, Johan; Xiao, Dongping; Wang, Wenfei; Vandersmissen, Raf; Degroote, Stefan; Boeykens, Steven; Schreurs, Dominique; Borghs, Gustaaf (2004-10) -
Surface stabilization for higher performance AlGaN/GaN HEMT with in-situ MOVPE SiN
Germain, Marianne; Leys, Maarten; Derluyn, Joff; Boeykens, Steven; Degroote, Stefan; Ruythooren, Wouter; Das, Johan; Vandersmissen, Raf; Xiao, Dongping; Wang, Wenfei; Borghs, Gustaaf (2005)