Browsing by author "Ren, C."
Now showing items 1-5 of 5
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High performance & CMOS integration friendly dual metal gate MOSFETs using TaN/Ru or TaN/W/Ru stacking multi-layers on HfLaO gate dielectric
Wang, X.P.; Li, M.F.; Yu, HongYu; Yang, J.J.; Loh, W.Y.; Zhu, C.X.; Du, A.Y.; Trigg, A.D.; Zhang, G.; Sik, H.W.; Ren, C.; Lim, Andy; Lee, Rinus; Yu, X.F.; Chen, J.D.; Chin, Albert; Yeo, Y.C.; Biesemans, Serge; Chua, T.C.; Nouri, F.; Lo, Patrick; Kwong, D.L. (2007) -
Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process
Kang, JinFeng; Yu, HongYu; Ren, C.; Wang, X.P.; Li, M.F.; Chan, D.S.H.; Yeo, Y.C.; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.L. (2005-04) -
Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting traps
Sa, N.; Kang, J.F.; Yang, H.; Liu, X.Y.; He, Y.D.; Han, R.Q.; Ren, C.; Yu, HongYu; Chan, D.S.H.; Kwong, D.-L. (2005-09) -
Scalability and reliability of TaN/HfN/HfO2 gate stack fabricated by a high temperature process
Kang, JinFeng; Yu, HongYu; Ren, C.; Yang, H.; Sa, N.; Liu, X.Y.; Han, R.Q.; Li, M.F.; Chan, D.S.H.; Kwong, D.L. (2005) -
Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
Wang, X.P.; Lim, A.E.J.; Yu, HongYu; Li, M.F.; Ren, C.; Loh, W.Y.; Zhu, C.X; Chin, A.; Trigg, A.D.; Yeo, Y.C.; Biesemans, Serge; Lo, G.Q.; Kwong, D.L. (2007)