Browsing by author "Schanovsky, Franz"

3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory

Verreck, Devin; Arreghini, Antonio; Schanovsky, Franz; Stanojevic, Zlatan; Steiner, K.; Mitterbauer, F.; Karner, Markus; Van den Bosch, Geert; Furnemont, Arnaud (2019)

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

Thesberg, Mischa; Schanovsky, Franz; Zhao, Ying; Karner, Markus; Gonzalez-Medina, Jose Maria; Stanojevic, Zlatan; Vaisman Chasin, Adrian; Rzepa, Gerhard (2024)

Advanced modeling of oxide defects for random telegraph noise

Goes, Wolfgang; Schanovsky, Franz; Grasser, Tibor; Reisinger, Hans; Kaczer, Ben (2011-06)

Application of single pulse dynamics to model program anderase cycling-induced defects in the tunnel oxide of charge-trapping devices

Bastos, Joao; Arreghini, Antonio; Verreck, Devin; Schanovsky, Franz; Degraeve, Robin; Linten, Dimitri; Van den Bosch, Geert; Furnemont, Arnaud (2019)

Bistable defects as the cause for NBTI and RTN

Goes, Wolfgang; Schanovsky, Franz; Reisinger, Hans; Kaczer, Ben; Grasser, Tibor (2011-08)

Modeling the Operation of Charge Trap Flash Memory-Part II: Understanding the ISPP Curve With a Semianalytical Model

Verreck, Devin; Schanovsky, Franz; Arreghini, Antonio; Van den Bosch, Geert; Stanojevic, Zlatan; Karner, Markus; Rosmeulen, Maarten (2024)

On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment

Thesberg, Mischa; Roussel; Stanojevic, Zlatan; Baumgartner, Oskar; Schanovsky, Franz; Karner, Markus; Kosina, Hans; Alam, Md Nur Kutubul; Truijen, Brecht; Kaczer, Ben (2022-06)