Browsing by author "Galloway, K.F."
Now showing items 1-7 of 7
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Laser- and heavy ion-induced charge collection in bulk FinFETs
El-Mamouni, F.; Zhang, E.X.; Pate, N.D.; Schrimpf, R.D.; Reed, R.A.; Galloway, K.F.; McMorrow, D.; Warner, J.; Simoen, Eddy; Claeys, Cor; Griffoni, Alessio; Linten, Dimitri; Vizkelethy, G. (2011) -
Laser-induced current transients in bulk FinFETs
El-Mamouni, F.; Zhang, E.X.; Hooten, N.; Schrimpf, R.D.; Reed, R.; Galloway, K.F.; McMarrow, D.; Warner, J.; Simoen, Eddy; Claeys, Cor (2011) -
Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFET devices
El-Mamouni, F.; Zhang, E.X.; Schrimpf, R.D.; Reed, R.A.; Galloway, K.F.; McMorrow, D.; Simoen, Eddy; Claeys, Cor; Cristoloveanu, S.; Xiong, W. (2011) -
Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs
Simoen, Eddy; Put, Sofie; Van Uffelen, Nick; Leroux, P.; Claeys, Cor; Ohyama, H.; Kulkarni, R.; Schrimpf, R.D.; Galloway, K.F. (2008) -
Total ionizing dose effect on depletion mode Ge pMOSFETs with high-k gate stack: on-off current ratio
Kulkarni, S.R.; Schrimpf, R.D.; Galloway, K.F.; Claeys, Cor; Simoen, Eddy (2008) -
Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain
Wang, L.; Zhang, E.X.; Zhang, C.X.; Duan, G.X.; Schrimpf, R.D.; Fleetwood, D.M.; Reed, R.A.; Samsel, I.K.; Hachtel, J.; Alles, M.L.; Witters, Liesbeth; Collaert, Nadine; Linten, Dimitri; Mitard, Jerome; Pantelides, S.T.; Galloway, K.F. (2015) -
Total ionizing dose effects on Ge pMOSFETs with high-k gate stack: on/off current ratio
Kulkarni, S.R.; Schrimpf, R.D.; Galloway, K.F.; Arora, R.; Claeys, Cor; Simoen, Eddy (2009)