Browsing by author "Nicolett, A. S."
Now showing items 1-16 of 16
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A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (2000) -
A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs at 300K
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (2000) -
A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (2001) -
A novel simple method to extract the effective LDD doping concentration on fully depleted SOI nMOSFET
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (1999) -
Analysis of the back gate voltage on the LDD SOI NMOSFET series resistance
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (1999) -
Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (1998) -
Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (1998) -
Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (2000) -
Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (2000) -
Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (2001) -
Extraction of the silicon film thickness on fully depleted SOI nMOSFETs using the black gate influence
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (2000) -
Improved channel length and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (1996) -
Improved channel length and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (1997) -
Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (1996) -
Simple method to extract the length dependent mobility degradation factor at 77 K
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (1997) -
Simultaneous extraction of the silicon film and front oxide thickness on fully depleted SOI nMOSFETs
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (2000)