Browsing by author "Vanhellemont, J."
Now showing items 1-16 of 16
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A comparison of intrinsic point defect properties in Si and Ge
Vanhellemont, J.; Spiewak, P.; Sueoka, K.; Simoen, Eddy; Romandic, I. (2008) -
A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon
De Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; Van Landuyt, J.; Simoen, Eddy; Claeys, Cor (2003) -
Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si
Gaubas, E.; Vanhellemont, J.; Simoen, Eddy; Romandic, I.; Geens, W.; Clauws, P. (2007) -
Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
Uleckas, A.; Gaubas, E.; Rafi, J.M.; Chen, J.; Yang, D.; Ohyama, H.; Simoen, Eddy; Vanhellemont, J. (2011) -
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy
De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; Van Landuyt, J.; Simoen, Eddy; Claeys, Cor (2002) -
Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates
Ohyama, H.; Rafi, J.M.; Campabadal, F.; Takakura, K.; Simoen, Eddy; Chen, J.; Vanhellemont, J. (2009) -
Deep level transient spectroacopy of transition metal impurities in germanium
Clauws, P.; Van Gheluwe, J.; Lauwaert, J.; Simoen, Eddy; Vanhellemont, J.; Meuris, Marc; Theuwis, A. (2007) -
Diode characteristics and thermal donor formation in germanium-doped silicon substrates
Rafi, J.-M.; Vanhellemont, J.; Simoen, Eddy; Chen, Jimmy; Yang, D.; Zabala, M.; China, E.; Lechon, M. (2011) -
Evaluation of Si surface conditions by the use of surface photovoltage technique
Trauwaert, Marie-Astrid; Kenis, Karine; Caymax, Matty; Mertens, Paul; Heyns, Marc; Vanhellemont, J.; Gräf, D.; Wagner, P. (1998) -
Field-enhanced electron capture for iron impurities in germanium
Lauwaert, J.; Segers, S.; Simoen, Eddy; Depla, D.; Vanhellemont, J.; Clauws, P.; Callens, F.; Vrielinck, H. (2011) -
Germanium doping for improved silicon substrates and devices
Vanhellemont, J.; Chen, J.; Lauwaert, J.; Vrielinck, H.; Xu, W.; Yang, D.; Rafi, J.M.; Ohyama, H.; Simoen, Eddy (2011) -
Grown-in lattice defects and diffusion in czochralski-grown germanium
Vanhellemont, J.; De Gryse, O.; Hens, S.; Vanmeerbeek, P.; Poelman, D.; Clauws, P.; Simoen, Eddy; Claeys, Cor; Romandic, I.; Theuwis, A.; Raskin, G.; Vercammen, H.; Mijlemans, P. (2004) -
Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks
Chen, Jiahe; Cornagliotti, Emanuele; Loozen, Xavier; Simoen, Eddy; Vanhellemont, J.; Lauwaert, J.; Vrielinck, H.; Poortmans, Jef (2011) -
Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation
Rafi, J.M.; Vanhellemont, J.; Simoen, Eddy; Chen, J.; Zabala, M.; Campabadal, F. (2009) -
On radiation damage in SiGe devices and its recovery behavior
Ohyama, H.; Takami, Y.; Vanhellemont, J.; Simoen, Eddy; Claeys, Cor (2008) -
On the impact of metal impurities on the carrier lifetime in n-type germanium
Gaubas, E.; Vanhellemont, J.; Simoen, Eddy; Theuwis, A.; Clauws, P. (2007)