Browsing by author "Vellianitis, G."
Now showing items 1-6 of 6
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Complex admittance analysis for La2Hf2O7/SiO2 high-kappa dielectric stacks
Apostolopoulos, G.; Vellianitis, G.; dimoulas, A.; Hooker, Jacob; Conard, Thierry (2004-01) -
HfO2 high-k gate dielectrics on Ge(100) by atomic oxygen beam deposition
dimoulas, A.; Mavrou, G.; Vellianitis, G.; Evangelou, E.; Boukos, N.; Houssa, Michel; Caymax, Matty (2005) -
HfO2 high-k gate dielectrics on germanium by molecular beam deposition
Dimoulas, G.; Mavrou, G.; Vellianitis, G.; Evangelou, E.; Boukos, N.; Travlos, A.; Houssa, Michel; Caymax, Matty (2004) -
MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
Vellianitis, G.; Apostolopoulos, G.; Mavrou, G.; Argyropoulos, K.; dimoulas, A.; Hooker, Jacob; Conard, Thierry; Butcher, M. (2004-06) -
Reliability degradation of HfSiO gate dielectric layers: influence of nitridation
Vellianitis, G.; Petry, Jasmine; Hooker, Jacob; Delabie, Annelies; De Gendt, Stefan (2007) -
Short minority carrier response time in HfO2/Ge metal-insulator-semiconductor capacitors
dimoulas, A.; Vellianitis, G.; Mavrou, G.; Evengelou, E.; Argyropoulos, K.; Houssa, Michel; Caymax, Matty (2005)