Browsing by author "Fanciulli, Marco"
Now showing items 1-14 of 14
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Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface
Fusi, Matteo; Lamagna, Luca; Spiga, Sabina; Fanciulli, Marco; Brammertz, Guy; Merckling, Clement; Meuris, Marc; Molle, Alessandro (2011) -
Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer
Muller, Robert; Krebs, Christoph; Goux, Ludovic; Wouters, Dirk; Genoe, Jan; Heremans, Paul; Spiga, Sabina; Fanciulli, Marco (2009-06) -
Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates
Lamagna, Luca; Fusi, Matteo; Spiga, Sabina; Fanciulli, Marco; Brammertz, Guy; Merckling, Clement; Meuris, Marc; Molle, Alessandro (2011) -
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates
Scalise, Emilio; Houssa, Michel; Cinquanta, Emilio; Grazianetti, Caludio; Van den Broek, Bas; Pourtois, Geoffrey; Stesmans, Andre; Fanciulli, Marco; Molle, Allessandro (2014) -
Improved performance of In0.53Ga0.47As-based metal-oxide-semiconductor capacitors with Al:ZrO2 gate dielectric grown by atomic layer deposition
Molle, Alessandro; Lamagna, Luca; Wiemer, Claudia; Spiga, Sabina; Fanciulli, Marco; Merckling, Clement; Brammertz, Guy; Caymax, Matty (2011) -
In situ interface and surface characterization of Ge passivated III-V substrates for high-k oxide deposition
Molle, Alessandro; Spiga, Sabina; Fanciulli, Marco; Brammertz, Guy; Meuris, Marc (2008) -
Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks
Molle, Alessandro; Lamagna, Luca; Spiga, Sabina; Fanciulli, Marco; Brammertz, Guy; Meuris, Marc (2010) -
Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In0.15Ga0.85As substrates
Molle, Alessandro; Brammertz, Guy; Lamagna, Luca; Spiga, Sabina; Meuris, Marc; Fanciulli, Marco (2009) -
Molecular beam deposition of Gd2O3 films on GeO2/Ge passivated III-V compound substrates (GaAs, In0.15Ga0.85As) prepared by atomic hydrogen cleaning
Molle, Alessandro; Spiga, Sabina; Andreozzi, Andrea; Fanciulli, Marco; Brammertz, Guy; Meuris, Marc (2009) -
Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition
Molle, Alessandro; Lamagna, Luca; Grazianetti, C.; Brammertz, Guy; Merckling, Clement; Caymax, Matty; Spiga, Sabina; Fanciulli, Marco (2011) -
Resistive electrical switching of CuTCNQ based memory with a dedicated switching layer
Muller, Robert; Thomas, Nicole; Krebs, Christoph; Goux, Ludovic; Wouters, Dirk; Genoe, Jan; Heremans, Paul; Spiga, Sabina; Fanciulli, Marco (2009) -
Structure and interface bonding of GeO2/Ge/ In0.15Ga0.85As heterostructures
Molle, Alessandro; Spiga, Sabina; Andrea, Andreozzi; Fanciulli, Marco; Brammertz, Guy; Meuris, Marc (2008) -
Theoretical aspects of graphene-like group IV semiconductors
Houssa, Michel; Van den Broek, Bas; Scalise, Emilio; Ealet, Benedicte; Pourtois, Geoffrey; Chiappe, Daniele; Cinquanta, Emilio; Grazianetti, Claudio; Fanciulli, Marco; Molle, Allessandro; Afanas'ev, Valery; Stesmans, Andre (2014) -
Vibrational properties of epitaxial silicene layers on (1 1 1) Ag
Scalise, Emilio; Cinquanta, Emilio; Houssa, Michel; Van den Broek, Bas; Chiappe, Danielle; Grazianetti, Claudio; Pourtois, Geoffrey; Ealet, Benedicte; Molle, Allessandro; Fanciulli, Marco; Afanasiev, Valeri; Stesmans, Andre (2014)