Browsing by author "Phatak, Anup"
Now showing items 1-7 of 7
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Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Y.; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2012-09) -
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Yu; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2013) -
Highly scalable bulk FinFET devices with multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond
Ragnarsson, Lars-Ake; Chew, Soon Aik; Dekkers, Harold; Toledano Luque, Maria; Parvais, Bertrand; De Keersgieter, An; Van Ammel, Annemie; Schram, Tom; Yoshida, Naomi; Phatak, Anup; Han, Keping; Colombeau, Benjamin; Brand, Adam; Horiguchi, Naoto; Thean, Aaron (2014) -
Process control & integration options of RMG Technology for aggressively scaled devices
Veloso, Anabela; Higuchi, Yuichi; Chew, Soon Aik; Devriendt, Katia; Ragnarsson, Lars-Ake; Sebaai, Farid; Schram, Tom; Brus, Stephan; Vecchio, Emma; Kellens, Kristof; Rohr, Erika; Eneman, Geert; Simoen, Eddy; Cho, Moon Ju; Paraschiv, Vasile; Crabbe, Yvo; Shi, Xiaoping; Tielens, Hilde; Van Ammel, Annemie; Dekkers, Harold; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; del Agua Borniquel, Jose Ignacio; Xu, K.; Allen, M.; Liu, C.; Xu, T.; Yoo, W.S.; Thean, Aaron; Horiguchi, Naoto (2012) -
RMG nMOS 1st process enabling 10x lower gate resistivity in N7 bulk FinFETs
Ragnarsson, Lars-Ake; Dekkers, Harold; Schram, Tom; Chew, Soon Aik; Parvais, Bertrand; Dehan, Morin; Devriendt, Katia; Tao, Zheng; Sebaai, Farid; Baerts, Christina; Van Elshocht, Sven; Yoshida, Naomi; Phatak, Anup; Lazik, Christoph; Brand, Adam; Clark, William; Fried, David; Mocuta, Dan; Barla, Kathy; Horiguchi, Naoto; Thean, Aaron (2015) -
W versus Co–Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes
Veloso, Anabela; Chew, Soon Aik; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Tielens, Hilde; Heylen, Nancy; Devriendt, Katia; Sebaai, Farid; Brus, Stephan; Ragnarsson, Lars-Ake; Pantisano, Luigi; Eneman, Geert; Carbonell, Laure; Richard, Olivier; Favia, Paola; Geypen, Jef; Bender, Hugo; Higuchi, Yuichi; Phatak, Anup; Thean, Aaron; Horiguchi, Naoto (2013) -
W vs. Co-Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes
Veloso, Anabela; Chew, Soon Aik; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Tielens, Hilde; Heylen, Nancy; Devriendt, Katia; Sebaai, Farid; Brus, Stephan; Ragnarsson, Lars-Ake; Pantisano, Luigi; Eneman, Geert; Carbonell, Laure; Richard, Olivier; Favia, Paola; Geypen, Jef; Bender, Hugo; Higuchi, Yuichi; Phatak, Anup; Thean, Aaron; Horiguchi, Naoto (2012-09)