Browsing by author "Fischetti, Massimo"
Now showing items 1-20 of 21
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3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
Reaz, Mahmud; Tonigan, Andrew M.; Li, Kan; Smith, M. Brandon; Rony, Mohammed W.; Gorchichko, Mariia; O'Hara, Andrew; Linten, Dimitri; Mitard, Jerome; Fang, Jingtian; Zhang, En Xia; Alles, Michael L.; Weller, Robert A.; Fleetwood, Daniel M.; Reed, Robert A.; Fischetti, Massimo, V; Pantelides, Sokrates T.; Weeden-Wright, Stephanie L.; Schrimpf, Ronald D. (2021) -
Calculation of the electron mobility in III-V inversion layers with high-kappa dielectrics
O'Regan, Terrance; Soree, Bart; Fischetti, Massimo; Jin, S.; Magnus, Wim; Meuris, Marc (2010) -
Effects of the Dielectric Environment on Electronic Transport in Monolayer MoS2: Screening and Remote Phonon Scattering
Van de Put, Maarten L.; Gaddemane, Gautam; Gopalan, Sanjay; Fischetti, Massimo, V (2020) -
Electron mobility calculations for Si, Ge and III-V inversion layers with HfO2
O'Regan, Terrance; Fischetti, Massimo; Soree, Bart; Magnus, Wim (2007) -
Electron mobility calculations for Si, Ge and III-V inversion layers with HfO2
O'Regan, Terrance; Fischetti, Massimo; Soree, Bart; Magnus, Wim (2007) -
Field induced quantum confinement in indirect semiconductors: quantum mechanical and modified semiclassical model
Vandenberghe, William; Soree, Bart; Magnus, Wim; Groeseneken, Guido; Verhulst, Anne; Fischetti, Massimo (2011) -
Figure of merit for and identification of sub-60 mV/decade devices
Vandenberghe, William; Verhulst, Anne; Soree, Bart; Magnus, Wim; Groeseneken, Guido; Smets, Quentin; Heyns, Marc; Fischetti, Massimo (2013) -
Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach
Vandenberghe, William; Soree, Bart; Magnus, Wim; Fischetti, Massimo (2011) -
Hole mobility in Ge and GaAs p-channel inversion layers with low-k insulator
Zhang, Yan; Fischetti, Massimo; Soree, Bart; Magnus, Wim; Heyns, Marc (2008) -
Image-force barrier lowering in top- and side-contacted two-dimensional materials
Deylgat, Emeric; Chen, Edward; Fischetti, Massimo, V; Soree, Bart; Vandenberghe, William G. (2022) -
Impact of field-induced quantum confinement in tunneling field-effect
Vandenberghe, William; Soree, Bart; Magnus, Wim; Groeseneken, Guido; Fischetti, Massimo (2011) -
Inter-ribbon tunneling in graphene: an atomistic Bardeen approach
Van de Put, Maarten; Vandenberghe, William; Soree, Bart; Magnus, Wim; Fischetti, Massimo (2016) -
Modeling of phonon-assisted Zener tunneling in indirect semiconductors
Vandenberghe, William; Soree, Bart; Fischetti, Massimo; Magnus, Wim; Groeseneken, Guido (2011) -
Modeling the capacitance-voltage response of In0.53Ga0.47As MOS structures : charge quantization and nonparabolic corrections
O'Regan, Terrance; Hurley, Paul; Soree, Bart; Fischetti, Massimo (2010) -
Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation
Gopalan, Sanjay; Mansoori, Shoaib; Van de Put, Maarten; Gaddemane, Gautam; Fischetti, Massimo (2023) -
Overlaps in stacked graphene flakes using empirical pseudopotentials
Van de Put, Maarten; Vandenberge, William; Magnus, Wim; Soree, Bart; Fischetti, Massimo (2015) -
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers
Zhang, Yan; Fischetti, Massimo; Soree, Bart; Magnus, Wim; Heyns, Marc; Meuris, Marc (2009) -
Si-based tunnel field-effect transistors for low-power nano-electronics
Verhulst, Anne; Vandenberghe, William; Leonelli, Daniele; Rooyackers, Rita; Vandooren, Anne; Zhuge, Jing; Kao, Frank; Soree, Bart; Magnus, Wim; Fischetti, Massimo; Pourtois, Geoffrey; Huyghebaert, Cedric; Huang, Ru; Wang, Yangyuan; De Meyer, Kristin; Dehaene, Wim; Heyns, Marc; Groeseneken, Guido (2011) -
Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators
Zhang, Yan; Fischetti, Massimo; Soree, Bart; O'Regan, Terrance (2010) -
Tunnel field-effect transistors for low-power nano-electronics
Verhulst, Anne; Vandenberghe, William; Leonelli, Daniele; Kao, Frank; Rooyackers, Rita; Vandooren, Anne; Zhuge, Jing; Soree, Bart; Magnus, Wim; Fischetti, Massimo; Pourtois, Geoffrey; Huang, Ru; Wang, Yangyuan; De Meyer, Kristin; Dehaene, Wim; Huyghebaert, Cedric; Heyns, Marc; Groeseneken, Guido (2011)