Now showing items 1-7 of 7

    • Ge deep sub-micron HiK/MG pFET with superior drive compared to Si HiK/MG state-of-the-art reference 

      De Jaeger, Brice; Kaczer, Ben; Zimmerman, Paul; Opsomer, Karl; Winderickx, Gillis; Van Steenbergen, Jan; Van Moorhem, Els; Terzieva, Valentina; Bonzom, Renaud; Leys, Frederik; Arena, Chantal; Bauer, Matthias; Werkhoven, Chris; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007-01)
    • Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line 

      De Jaeger, Brice; Houssa, Michel; Satta, Alessandra; Kubicek, Stefan; Verheyen, Peter; Van Steenbergen, Jan; Croon, Jeroen; Kaczer, Ben; Van Elshocht, Sven; Delabie, Annelies; Kunnen, Eddy; Sleeckx, Erik; Teerlinck, Ivo; Lindsay, Richard; Schram, Tom; Chiarella, Thomas; Degraeve, Robin; Conard, Thierry; Poortmans, Jef; Winderickx, Gillis; Boullart, Werner; Schaekers, Marc; Mertens, Paul; Caymax, Matty; Vandervorst, Wilfried; Van Moorhem, Els; Biesemans, Serge; De Meyer, Kristin; Ragnarsson, Lars-Ake; Lee, S.; Kota, G.; Raskin, G.; Mijlemans, P.; Autran, J.L.; Afanas'ev, V.; Stesmans, A.; Meuris, Marc; Heyns, Marc (2004)
    • Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line 

      Meuris, Marc; De Jaeger, Brice; Kubicek, Stefan; Verheyen, Peter; Van Steenbergen, Jan; Lujan, Guilherme; Kunnen, Eddy; Sleeckx, Erik; Teerlinck, I; Van Elshocht, Sven; Delabie, Annelies; Lindsay, Richard; Satta, Alessandra; Schram, Tom; Chiarella, Thomas; Degraeve, Robin; Richard, Olivier; Conard, Thierry; Poortmans, Jef; Winderickx, Gillis; Houssa, Michel; Boullart, Werner; Schaekers, Marc; Mertens, Paul; Caymax, Matty; De Gendt, Stefan; Vandervorst, Wilfried; Van Moorhem, Els; Biesemans, Serge; De Meyer, Kristin; Ragnarsson, Lars-Ake; Lee, S.; Kota, G.; Raskin, G.; Mijlemans, P.; Afanasiev, Valeri; Stesmans, Andre; Heyns, Marc (2004)
    • Germanium deep-submicron p-FET and n-FET devices, fabricated on germanium-on-insulator substrates 

      Meuris, Marc; De Jaeger, Brice; Van Steenbergen, Jan; Bonzom, Renaud; Caymax, Matty; Houssa, Michel; Kaczer, Ben; Leys, Frederik; Martens, Koen; Opsomer, Karl; Pourghaderi, Mohammad Ali; Satta, Alessandra; Simoen, Eddy; Terzieva, Valentina; Van Moorhem, Els; Winderickx, Gillis; Loo, Roger; Clarysse, Trudo; Conard, Thierry; Delabie, Annelies; Hellin, David; Janssens, Tom; Onsia, Bart; Sioncke, Sonja; Mertens, Paul; Snow, Jim; Van Elshocht, Sven; Vandervorst, Wilfried; Zimmerman, Paul; Brunco, David; Raskin, G.; Letertre, F.; Akatsu, T.; Billon, T.; Heyns, Marc (2007)
    • Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates 

      De Jaeger, Brice; Bonzom, Renaud; Leys, Frederik; Richard, Olivier; Van Steenbergen, Jan; Winderickx, Gillis; Van Moorhem, Els; Raskin, G.; Letertre, F.; Billon, T.; Meuris, Marc; Heyns, Marc (2005-06)
    • The future of high-k on pure germanium and its importance for Ge CMOS 

      Meuris, Marc; Delabie, Annelies; Van Elshocht, Sven; Kubicek, Stefan; Verheyen, Peter; De Jaeger, Brice; Van Steenbergen, Jan; Winderickx, Gillis; Van Moorhem, Els; Purunen, Riikka; Brijs, Bert; Caymax, Matty; Conard, Thierry; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; De Gendt, Stefan; Schram, Tom; Chiarella, Thomas; Onsia, Bart; Teerlinck, I; Mertens, Paul; Raskin, G; Mijlemans, P; Biesemans, Serge; Heyns, Marc (2004)
    • The future of high-k on pure germanium and its importance for Ge CMOS 

      Meuris, Marc; Delabie, Annelies; Van Elshocht, Sven; Kubicek, Stefan; Verheyen, Peter; De Jaeger, Brice; Van Steenbergen, Jan; Winderickx, Gillis; Van Moorhem, Els; Puurunen, R.; Brijs, Bert; Caymax, Matty; Conard, Thierry; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; De Gendt, Stefan; Schram, Tom; Chiarella, Thomas; Onsia, Bart; Teerlinck, I; Houssa, Michel; Mertens, Paul; Raskin, G.; Mijlemans, P.; Biesemans, Serge; Heyns, Marc (2005)