Browsing by author "Nishimura, T."

Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

Takeuchi, S.; Shimura, Y.; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, O.; Sakai, A.; Zaima, S. (2010)

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Vincent, Benjamin; Shimura, Y.; Takeuchi, Shotaro; Nishimura, T.; Eneman, Geert; Firrincieli, Andrea; Demeulemeester, Jelle; Vantomme, Andre; Clarysse, Trudo; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2011)

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Vincent, Benjamin; Shimura, Y.; Takeuchi, S.; Nishimura, T.; Demeulemeester, J.; Eneman, Geert; Clarysse, Trudo; Vantomme, Andre; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2010)

Formation of Ni(Ge1-ySny)/Ge1-xSnx/Ge contact for Ge1-xSnx source/drain Stressor

Nishimura, T.; Nakatsuka, O.; Shimura, Y.; Takeuchi, S.; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, S. (2010)

Ge1-xSnx stressors for strained-Ge CMOS

Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Sakai, A.; Nakatsuka, Osaku; Zaima, Shigeaki (2011)