Browsing by author "Ji, Zhigang"
Now showing items 21-28 of 28
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Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes
Gao, R.; Ji, Zhigang; Hatta, S.M.; Zhang, J.F.; Franco, Jacopo; Kaczer, Ben; Zhang, W.; Duan, M.; De Gendt, Stefan; Linten, Dimitri; Groeseneken, Guido; Bi, J.; Liu, M. (2016) -
Probing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signals
Chai, Zheng; Ma, Jigang; Zhang, Weidong; Govoreanu, Bogdan; Ji, Zhigang; Zhang, Jian Fu; Jurczak, Gosia (2017) -
Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation
Gao, Rui; Manut, Azrif B.; Ji, Zhigang; Ma, Jigang; Duan, Meng; Zhang, Jian Fu; Franco, Jacopo; Hatta, Sharifah Wan Muhamad; Zhang, Wei Dong; Kaczer, Ben; Vigar, David; Linten, Dimitri; Groeseneken, Guido (2017) -
RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs
Franco, Jacopo; Kaczer, Ben; Waldron, Niamh; Roussel, Philippe; Alian, AliReza; Pourghaderi, Mohammad Ali; Ji, Zhigang; Grasser, Tibor; Kauerauf, Thomas; Sioncke, Sonja; Collaert, Nadine; Thean, Aaron; Groeseneken, Guido (2014) -
SrTiO3 for sub-20 nm DRAM technology nodes – characterization and modeling
Kaczer, Ben; Larcher, Luca; Vandelli, Luca; Resinger, Hans; Popovici, Mihaela Ioana; Clima, Sergiu; Ji, Zhigang; Joshi, Saumya; Swerts, Johan; Redolfi, Augusto; Afanasiev, Valeri; Jurczak, Gosia (2014) -
SrTiOx for sub-20 nm DRAM technology nodes - characterization and modeling
Kaczer, Ben; Larcher, Luca; Vandelli, Luca; Reisinger, Hans; Popovici, Mihaela Ioana; Clima, Sergiu; Ji, Zhigang; Joshi, Saumya; Swerts, Johan; Redolfi, Augusto; Afanasiev, Valeri; Jurczak, Gosia (2015) -
Trigger-when-charged: a technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd
Manut, Azrif; Gao, Rui; Zhang, Jian Fu; Ji, Zhigang; Mehedi, Mehzabeen; Zhang, Wei Dong; Vigar, David; Asenov, Asen; Kaczer, Ben (2019) -
Understanding charge traps for optimizing Si-passivated Ge nMOSFETs
Ren, Pengpeng; Gao, R.; Ji, Zhigang; Arimura, Hiroaki; Zhang, J. F.; Wang, R.; Duan, M.; Zhang, W.; Franco, Jacopo; Sioncke, Sonja; Cott, Daire; Mitard, Jerome; Witters, Liesbeth; Mertens, Hans; Kaczer, Ben; Mocuta, Anda; Collaert, Nadine; Linten, Dimitri; Huang, R.; Thean, Aaron; Groeseneken, Guido (2016)