Browsing by author "Chai, Zheng"
Now showing items 1-12 of 12
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Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector
Chai, Zheng; Zhang, Weidong; Clima, Sergiu; Hatem, Firas; Degraeve, Robin; Diao, Qihui; Zhang, Jian Fu; Freitas, Pedro; Marsland, John; Fantini, Andrea; Garbin, Daniele; Goux, Ludovic; Kar, Gouri Sankar (2021) -
Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors
Degraeve, Robin; Chai, Zheng; Zhang, W; Clima, Sergiu; Hatem, F; Zhang, JF; Freitas, P; Marsland, J; Fantini, Andrea; Garbin, Daniele; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement
Ma, Jigang; Chai, Zheng; Zhang, Weidong; Govoreanu, Bogdan; Zhang, Jiang F.; Ji, Z.; Benbakhti, B.; Groeseneken, Guido; Jurczak, Malgorzata (2016) -
Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching
Zhou, Xue; Hu, Zeyu; Chai, Zheng; Zhang, Weidong; Clima, Sergiu; Degraeve, Robin; Zhang, Jian Fu; Fantini, Andrea; Garbin, Daniele; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2022) -
Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution
Ma, Jigang; Chai, Zheng; Zhang, Wei Dong; Zhang, J. F.; Ji, Z.; Benbakhti, Brahim; Govoreanu, Bogdan; Simoen, Eddy; Goux, Ludovic; Belmonte, Attilio; Degraeve, Robin; Kar, Gouri Sankar; Jurczak, Gosia (2018) -
New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors
Hu, Zeyu; Zhang, Weidong; Degraeve, Robin; Garbin, Daniele; Chai, Zheng; Saxena, Nishant; Freitas, Pedro; Fantini, Andrea; Ravsher, Taras; Clima, Sergiu; Zhang, Jian Fu; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2023) -
Probing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signals
Chai, Zheng; Ma, Jigang; Zhang, Weidong; Govoreanu, Bogdan; Ji, Zhigang; Zhang, Jian Fu; Jurczak, Gosia (2017) -
Random telegraph signal noise in advanced high performance and memory devices
Claeys, Cor; de Andrade, Gloria; Chai, Zheng; Fang, Wen; Govoreanu, Bogdan; Kaczer, Ben; Zhang, Wei; Simoen, Eddy (2016) -
RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism
Chai, Zheng; Ma, Jigang; Zhang, Weidong; Govoreanu, Bogdan; Simoen, Eddy; Zhang, Jiang; Li, Ziqhiang; Gao, R.; Groeseneken, Guido; Jurczak, Gosia (2016) -
Stochastic computing based on volatile GeSe ovonic threshold switching selectors
Chai, Zheng; Freitas, Pedro; Zhang, Weidong; Hatem, Firas; Degraeve, Robin; Clima, Sergiu; Fu Zhang, Jian; Marsland, John; Fantini, Andrea; Garbin, Daniele; Goux, Ludovic; Kar, Gouri Sankar (2020) -
TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device
Ma, Jigang; Chai, Zheng; Zhang, Wei Dong; Zhang, Jian Fu; Marsland, John; Govoreanu, Bogdan; Degraeve, Robin; Goux, Ludovic; Kar, Gouri Sankar (2019) -
The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique
Chai, Zheng; Zhang, Weidong; Freitas, Pedro; Hatem, Firas; Zhang, Jian Fu; Marsland, John; Govoreanu, Bogdan; Goux, Ludovic; Kar, Gouri Sankar; Hall, Steve; Chalker, Paul; Robertson, john (2018)