Browsing by author "Zaima, Shigeaki"
Now showing items 1-20 of 32
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Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, Tsuyoshi; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Sakai, A.; Zaima, Shigeaki (2010-10) -
Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels
Chou, H.-Y; Afanas'ev, Valeri; Houssa, Michel; Stesmans, Andre; Vincent, Benjamin; Gencarelli, Federica; Shimura, Yosuke; Merckling, Clement; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2014) -
Defect control for Ge/Si and Ge1-xSnx/Ge/Si heterostructures
Sakai, Akira; Takeuchi, Shotaro; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2007) -
Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si
Gupta, Somya; Shimura, Yosuke; Richard, Olivier; Douhard, Bastien; Simoen, Eddy; Bender, Hugo; Nakatsuka, Osama; Zaima, Shigeaki; Loo, Roger; Heyns, Marc (2018-10) -
Effect of atomic deuterium irradiation on initial growth of Sn and Ge1-xSnx on Ge(001) substrates
Shinoda, Tatsuya; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Zaima, Shigeaki (2012) -
Electrical activity of threading dislocations and defect complexes in GeSn epitaxial layers
Gupta, Somya; Simoen, Eddy; Asano, Takanori; Nakatsuka, Osamu; Gencarelli, Federica; Shimura, Yosuke; Moussa, Alain; Loo, Roger; Zaima, Shigeaki; Nguyen, Ngoc Duy; Heyns, Marc (2013) -
Formation and characterization of Ni(Ge1-ySny)/Ge1-xSnx/Ge contacts
Nishimura, Tsuyoshi; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, Shigeaki (2010-09) -
Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, Shigeaki (2011) -
Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osaku; Zaima, Shigeaki (2010) -
Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osaku; Zaima, Shigeaki (2010) -
Ge1-xSnx stressors for strained-Ge CMOS
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Sakai, A.; Nakatsuka, Osaku; Zaima, Shigeaki (2011) -
Ge1-xSnx stressors for strained-Ge CMOS
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, Tsuyoshi; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010) -
GeSn: future applications and strategy
Loo, Roger; Caymax, Matty; Vincent, Benjamin; Dekoster, Johan; Takeuchi, Shotaro; Nakatsuka, Osamu; Zaima, Shigeaki; Temst, Kristiaan; Vantomme, Andre (2010) -
Growth and optical properties of GeSn alloy thin films with a high Sn content
Zaima, Shigeaki; Nakatsuka, Osamu; Nakamura, Marika; Takeuchi, Wakana; Shimura, Yosuke; Taoka, Noriyuki (2012-10) -
Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Zaima, Shigeaki; Ogawa, Masaki; Sakai, Akira (2008) -
Heavily doping technology for strained Ge1-xSnx layers
Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010) -
Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects
Ike, Shinichi; Simoen, Eddy; Shimura, Yosuke; Hikavyy, Andriy; Vandervorst, Wilfried; Loo, Roger; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki (2016) -
Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects
Ike, Shinichi; Simoen, Eddy; Shimura, Yosuke; Hikavyy, Andriy; Vandervorst, Wilfried; Loo, Roger; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki (2015) -
Influence of precursor gas source on defect properties in Si1xGex epitaxial thin films
Ike, Shinichi; Simoen, Eddy; Shimura, Yosuke; Hikavyy, Andriy; Vandervorst, Wilfried; Loo, Roger; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki (2015) -
Interface and defect control for group IV channel engineering
Sakai, Akira; Ohara, Yuji; Ueda, Takaya; Toyoda, Eiji; Izunome, Koji; Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki; Kimura, Shigeru (2008)