Browsing by author "Hogg, S."
Now showing items 1-11 of 11
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Backscattering/channeling study of high-dose rare-earth implants into Si
Vantomme, Andre; Wahl, U.; Wu, Ming Fang; Hogg, S.; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1998) -
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Jacobs, Koen; Moerman, Ingrid; White, M. E.; O'Donnell, K. P.; Nistor, Leona; Van Landuyt, J.; Bender, Hugo (2000) -
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Jacobs, Koen; Moerman, Ingrid; White, M. E.; O'Donnell, K. P.; Nistor, Leona; Van Landuyt, J.; Bender, Hugo (2000) -
Direct determination of the composition and elastic strain in InGaN and AlGaN layers
Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Yao, S.; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (1999) -
Elastic strain in InGaN and AlGaN layers
Wu, Ming Fang; Yao, S.; Vantomme, Andre; Hogg, S.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (1999) -
Elastic strain in InGaN and AlGaN layers
Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (2000) -
Formation and thermal stability of Nd0.32Y0.68Si1.7 layers formed by channeled ion beam synthesis
Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Pattyn, H.; Langouche, G.; Jin, S.; Bender, Hugo (1998) -
Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation
Jin, S.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Pattyn, H.; Langouche, G. (1998) -
Rutherford backscattering/channeling study of a thin AlGaN layer on Al2O03(0001)
Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid (2001) -
Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111)
Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Wahl, U.; Deweerd, Wim; Pattyn, Hugo; Langouche, G.; Jin, S.; Bender, Hugo (1998) -
Two-dimensional carrier profiling in advanced devices with pico-meter resolution
Vandervorst, Wilfried; Alvarez, David; Eyben, Pierre; Fouchier, Marc; Hartwich, J.; Slesazech, S.; Verheyen, Peter; Hogg, S. (2004)