Browsing by author "Agopian, Paula G.D."
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AlGaN/GaN MISHEMT analysis from an analog point of view up to 150 oC
Agopian, Paula G.D.; Martino, Joao A; Simoen, Eddy; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2020) -
Analog performance of standard and uinaxial strained triple-gate SOI FinFET under X-ray radiation
Bordallo, Caio; Teixeira, Fernando; Silveira, Marcilei; Agopian, Paula G.D.; Martino, Joao A.; Simoen, Eddy; Claeys, Cor (2014) -
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
Martino, Marcio D.V.; Martino, Joao A.; Agopian, Paula G.D.; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Claeys, Cor (2017) -
Device-based threading dislocation assessment in germanium hetero-epitaxy
Simoen, Eddy; Hsu, Brent; Eneman, Geert; Rosseel, Erik; Loo, Roger; Arimura, Hiroaki; Horiguchi, Naoto; Claeys, Cor; Wen, Wei-Chen; Nakashima, Hiroshi; Oliveira, Alberto; Agopian, Paula G.D.; Martino, Joao (2019) -
Enhanced model for ZTC in irradiated and strained pFinFET
Nascimento, Vinicius M.; Agopian, Paula G.D.; Simoen, Eddy; Claeys, Cor; Martino, Joao A. (2017) -
Gate induced floating body effect behavior in uniaxially strained SOI nMOSFETs
Agopian, Paula G.D.; Pacheco, Vinicius H.; Martino, Joao A.; Simoen, Eddy; Claeys, Cor (2009) -
Gate oxide thickness influence on the gate induced floating body effect in SOI technology
Agopian, Paula G.D.; Martino, J.M.; Simoen, Eddy; Claeys, Cor (2008) -
GR-noise characterization of Ge pFinFETs with STI first and STI last process
Oliveira, Alberto V.; Simoen, Eddy; Mitard, Jerome; Agopian, Paula G.D.; Martino, Joao A; Langer, Robert; Witters, Liesbeth; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2016) -
Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices
Agopian, Paula G.D.; Carmo, G.J.; Martino, J.A.; Simoen, Eddy; Collaert, Nadine (2020) -
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs
Mendes Bordallo, Caio Cesar; Martino, Joao Antonio; Agopian, Paula G.D.; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Simoen, Eddy; Claeys, Cor; Collaert, Nadine; Thean, Aaron (2016) -
Influence of proton radiation and strain on nFinFET zero temperature coefficient
Nascimento, Vinicius; Agopian, Paula G.D.; Almeida, Luciano; Bordallo, Caio; Simoen, Eddy; Claeys, Cor; Martino, Joao A. (2016) -
Low temperature effect on strained and relaxed Ge pFinFETs STI last processes
Oliveira, Alberto; Simoen, Eddy; Agopian, Paula G.D.; Martino, Joao A.; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2016) -
NW-TFET analog performance for different gate oxide thickness and Ge source
Neves Souza, Felipe; Agopian, Paula G.D.; Martino, Joao Antonio; Rooyackers, Rita; Vandooren, Anne; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2014) -
NW-TFET analog performance for different Ge source compositions
Agopian, Paula G.D.; dos Santos, Sara D.; Neves, Felipe S.; Martino, Joao A.; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Claeys, Cor (2013) -
OTA performance comparison designed with experimental NW-MOSFET and NW-TFET devices
Nogueira, Alexandro; Agopian, Paula G.D.; Rangel, Roberto; Martino, Joao A.; Simoen, Eddy; Rooyackers, Rita; Claeys, Cor; Collaert, Nadine (2019) -
Proton radiation effects on the analog performance of bulk n- and p-FinFETs
Bertoldo, M.; Oliveira, A.V.; Agopian, Paula G.D.; Simoen, Eddy; Claeys, Cor; Martino, Joao Antonio (2015) -
Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency
Caparroz, Luis F.V.; Martino, Joao A.; Simoen, Eddy; Claeys, Cor; Agopian, Paula G.D. (2016) -
Split-CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last process
Oliveira, Alberto V.; Simoen, Eddy; Agopian, Paula G.D.; Martino, Joao A; Mitard, Jerome; Witters, Liesbeth; Langer, Robert; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2016) -
Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs
Agopian, Paula G.D.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (2008) -
Vertical nanowire TFET diameter influence on intrinsic voltage gain for different inversion conditions
Sivieri, V.B.; Bordallo, Caio; Agopian, Paula G.D.; Martino, Joao Antonio; Rooyackers, Rita; Vandooren, Anne; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2015)