Browsing by author "Sakai, A."
Now showing items 1-6 of 6
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Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, S.; Shimura, Y.; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, O.; Sakai, A.; Zaima, S. (2010) -
Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, Tsuyoshi; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Sakai, A.; Zaima, Shigeaki (2010-10) -
Ge1-xSnx stressors for strained-Ge CMOS
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Sakai, A.; Nakatsuka, Osaku; Zaima, Shigeaki (2011) -
Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology
Nguyen, Duy; Rosseel, Erik; Takeuchi, Shotaro; Everaert, Jean-Luc; Yang, Lijun; Goossens, Jozefien; Moussa, Alain; Clarysse, Trudo; Richard, Olivier; Bender, Hugo; Zaima, S.; Sakai, A.; Loo, Roger; Lin, J.C.; Vandervorst, Wilfried; Caymax, Matty (2010) -
X-ray microdiffraction study on crystallinity of micron-sized Ge films selectively grown on Si(001) substrates
Ebihara, K.; Harada, S.; Kikkawa, J.; Nakamura, Y.; Sakai, A.; Wang, Gang; Caymax, Matty; Imai, Y.; Kimura, S.; Sakata, O. (2010) -
X-ray microdiffraction study on crystallinity of micron-sized Ge films selectively grown on Si(001) substrates
Ebihara, K.; Harada, S.; Kikkawa, J.; Nakamura, Y.; Sakai, A.; Wang, Gang; Caymax, Matty; Imai, Y.; Kimura, S.; Sakata, O. (2010)