Browsing by author "Lukyanchikova, N. B."
Now showing items 1-15 of 15
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Assymetry of the RTSs capture and emission kinetics in nMOSFETs processed in a 0.35μm CMOS technology
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, Cor (1997) -
Effect of surface electric field on Coulomb blockade energy and RTS capture kinetics in submicron nMOSFETs
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, Cor (1999) -
Generation-recombination and 1/f noise in buried channel pMOSFETs under inversion conditions
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, Cor (1994) -
Impact of cobalt silicidation on the low-frequency noise behavior of shallow P-N junctions
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2000) -
Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal-oxide-semiconductor field-effect transistors
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, Cor (1998) -
Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, Cor (2000) -
Low-frequency noise characterisation of silicon-on-insulator depletion mode pMOSFETs
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, C. (1995) -
Low-frequency noise sources in silicon-on-insulator depletion-mode MOSFETs
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, Cor (1995) -
Low-frequency noise sources in silicon-on-insulator depletion-mode p-MOSFETs
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, Cor (1994) -
Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, Cor (1999) -
Physical model of GR noise observed under inversion conditions near the pSi/SiO2 interfaces in SIMOX submicron MOSFETs and its application for defect characterization
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, C. (1997) -
Random telegraph signals as a diagnostic tool to study single defects in submicron silicon MOSFETs
Simoen, Eddy; Claeys, Cor; Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P. (1999) -
Results of low-frequency noise in submicron nMOSFETs processed by a 0.35mm CMOS technology
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, Cor (1996) -
RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, Cor (1999) -
Single defect studies by means of random telegraph signals in submicron silicon MOSFETs
Simoen, Eddy; Claeys, Cor; Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P. (1999)