Browsing by author "Bhouri, Nada"
Now showing items 1-5 of 5
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Asymmetric relaxation of SiGe in patterned Si line structures
Wormington, Matthew; Lafford, Tamzin; Godny, Stephane; Ryan, Paul; Loo, Roger; Bhouri, Nada; Caymax, Matty (2007) -
Influence of the highly-doped drain implantation and the window size on defect creation in p/n Si1-xGex source/drain junctions
Chowdhury, Mohammad Kamruzzaman; Vissouvanadin Soubaretty, Bertrand; Bargallo Gonzalez, Mireia; Bhouri, Nada; Verheyen, Peter; Hikavyy, Andriy; Richard, Olivier; Geypen, Jef; Bender, Hugo; Loo, Roger; Claeys, Cor; Simoen, Eddy; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.G.; Lu, J.P.; Weijtmans, J.W.; Wise, R. (2008) -
pMOS transistor with embedded SiGe: elastic and plastic relaxation issues
Hikavyy, Andriy; Bhouri, Nada; Loo, Roger; Verheyen, Peter; Clemente, Francesca; Hopkins, John; Trussell, Rob; Caymax, Matty (2007) -
pMOS transistor with embedded SiGe: elastic and plastic relaxation issues
Hikavyy, Andriy; Bhouri, Nada; Loo, Roger; Verheyen, Peter; Clemente, Francesca; Hopkins, John; Trussell, Rob; Caymax, Matty (2008) -
Relaxation induced excess leakage current in recessed Si1-xGex source/drain junctions
Bargallo Gonzalez, Mireia; Chowdhury, Mohammad Kamruzzaman; Bhouri, Nada; Verheyen, Peter; Leys, Frederik; Richard, Olivier; Loo, Roger; Claeys, Cor; Simoen, Eddy; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.G.; Lu, J.P.; Weijtmans, J.W.; Wise, R. (2007)