Browsing by author "Wang, Qingfeng"
Now showing items 1-8 of 8
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A manufacturable process to improve thermal stability of 0.25-µm cobalt silicided poly gate
Wang, Qingfeng; Lauwers, A.; Deweerdt, Bruno; Verbeeck, Rita; Loosen, Fred; Maex, Karen (1995) -
Effect of silicidation schemes on interface contact resistance
Wang, Qingfeng; Lauwers, Anne; Deweerdt, Bruno; Maex, Karen (1994) -
Formation of deep submicrometer cobalt silicated poly gate using bilayer processes
Wang, Qingfeng; Lauwers, Anne; Deweerdt, Bruno; Verbeeck, Rita; Maex, Karen (1995) -
Manufacturability issues for application of silicides in 0.25 μm CMOS process and beyond
Wang, Qingfeng; Lauwers, Anne; Jonckx, Franky; de Potter de ten Broeck, Muriel; Chen, Chun-Cho; Maex, Karen (1996) -
New CoSi2 SALICIDE technology for 0.1 µm processes and below
Wang, Qingfeng; Maex, Karen; Kubicek, Stefan; Jonckheere, Rik; Kerkwijk, Bas; Verbeeck, Rita; Biesemans, Serge; De Meyer, Kristin (1995) -
Sub 0.1 mm nMOSFETs fabricated using experimental design techniques to optimise performance and minimise process sensitivity
Kubicek, Stefan; Biesemans, Serge; Wang, Qingfeng; Maex, Karen; De Meyer, Kristin (1995) -
Ti-salicide improvement by preamorphization for ULSI applications
Chen, Chun-Cho; Wang, Qingfeng; Jonckx, Franky; Jenq, Jyh-Shyang; Maex, Karen (1996) -
Ti/Co bilayers in salicide technology: electrical evaluation
Lauwers, Anne; Wang, Qingfeng; Deweerdt, Bruno; Maex, Karen (1995)