Browsing by author "Hayashi, S."
Now showing items 1-5 of 5
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45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
Mitsuhashi, Riichirou; Yamamoto, Kazuhiko; Hayashi, S.; Rothschild, Aude; Kubicek, Stefan; Veloso, Anabela; Van Elshocht, Sven; Jurczak, Gosia; De Gendt, Stefan; Biesemans, Serge; Niwa, M. (2005) -
Current status and addressing the challenges of Hf-based gate stack toward 45nm-LSTP application
Niwa, Masaaki; Mitsuhashi, Riichirou; Yamamoto, K.; Hayashi, S.; Harada, Yoshinao; Rothschild, Aude; Hoffmann, Thomas Y.; Kubicek, Stefan; De Gendt, Stefan; Heyns, Marc; Biesemans, Serge; Kubota, M. (2005-10) -
High performance n-mos FinFET by damage-free, conformal extension doping
Zschaetzsch, Gerd; Sasaki, Y.; Hayashi, S.; Togo, Mitsuhiro; Chiarella, Thomas; Kambham, Ajay Kumar; Mody, J.; Douhard, Bastien; Horiguchi, Naoto; Mizuno, B.; Ogura, M.; Vandervorst, Wilfried (2011) -
Prospect of Hf-based gate dielectric by PVD with FUSI gate for LSTP application
Niwa, Masaaki; Mitsuhashi, Riichirou; Yamamoto, Kazuhiko; Hayashi, S.; Harada, Y.; Kubota, M.; Rothschild, Aude; Hoffmann, Thomas Y.; Kubicek, Stefan; De Gendt, Stefan; Heyns, Marc; Biesemans, Serge (2005) -
PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application
Yamamoto, Kazuhiko; Kubicek, Stefan; Rothschild, Aude; Mitsuhashi, Riichirou; Deweerd, Wim; Veloso, Anabela; Jurczak, Gosia; Biesemans, Serge; De Gendt, Stefan; Wickramanayaka, S.; Hayashi, S.; Niwa, Masaaki (2005-06)