Browsing by author "Reisinger, H."
Now showing items 1-10 of 10
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A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs
Illarionov, Yu. Yu.; Bina, M.; Tyaginov, S. E.; Rott, K.; Reisinger, H.; Kaczer, Ben; Grasser, T. (2014) -
Advanced characterization of oxide traps: the dynamic time-dependent defect spectroscopy
Grasser, Tibor; Rott, K.; Reisinger, H.; Wagner, P.J.; Goes, W; Schanovsky, F.; Waltl, M.; Toledano Luque, Maria; Kaczer, Ben (2013) -
Characterization and modeling of charge trapping: From single defects to devices
Grasser, T.; Rzepa, G.; Waltl, M.; Goes, W.; Rott, K.; Rott, G.; Reisinger, H.; Franco, Jacopo; Kaczer, Ben (2014) -
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
Grasser, T.; Stampfer, B.; Waltl, M.; Rzepa, G.; Rupp, K.; Schanovsky, F.; Pobegen, G.; Puschkarsky, K.; Reisinger, H.; O'Sullivan, Barry; Kaczer, Ben (2018) -
Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
Grasser, T.; Rott, K.; Reisinger, H.; Waltl, M.; Wagner, P.; Schanovsky, F.; Goes, W.; Pobegen, G.; Kaczer, Ben (2013) -
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
Grasser, T.; Waltl, M.; Puschkarsky, K.; Stampfer, B.; Rzepa, G.; Pobegen, G.; Reisinger, H.; Arimura, Hiroaki; Kaczer, Ben (2017) -
NBTI in nanoscale MOSFETs – The ultimate modeling menchmark
Grasser, T.; Rott, K.; Reisinger, H.; Waltl, M.; Schanovsky, F.; Kaczer, Ben (2014) -
Physical modeling of NBTI: from individual defects to devices
Rzepa, G.; Goes, W.; Rott, G.; Rott, K.; Karner, M.; Kernstock, C.; Kaczer, Ben; Reisinger, H.; Grasser, T. (2014) -
Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability
Grasser, T.; Kaczer, Ben; Hehenberger, P.; Gös, W.; O'Connor, Robert; Reisinger, H.; Gustin, W.; Schlünder, C. (2007) -
The "permanent" component of NBTI revisited: saturation, degradation-reversal, and annealing
Grasser, T.; Waltl, M.; Rzepa, G.; Goes, W.; Wimmer, Y.; El-Sayed, A.-M.; Shluger, A. L.; Reisinger, H.; Kaczer, Ben (2016)