Browsing by author "Gerardin, S."
Now showing items 1-8 of 8
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A statistical approach to microdose induced degradation in FinFET devices
Griffoni, Alessio; Gerardin, S.; Roussel, Philippe; Degraeve, Robin; Meneghesso, G.; Paccagnella, A.; Simoen, Eddy; Claeys, Cor (2009) -
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
Tajalli, A.; Stockman, Arno; Meneghini, M.; Mouhoubi, S.; Banerjee, A.; Gerardin, S.; Bagatin, M.; Paccagnella, A.; Zanoni, E.; Tack, M.; Bakeroot, Benoit; Moens, P.; Meneghesso, G. (2018) -
Effects of heavy-ion strikes on fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques
Griffoni, A.; Gerardin, S.; Cester, A.; Paccagnella, A.; Simoen, Eddy; Claeys, Cor (2007) -
Electrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation
Cester, A.; Gerardin, S.; Paccagnella, A.; Simoen, Eddy; Claeys, Cor (2005) -
Electrostatic discharge effects in fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques
Griffoni, A.; Tazzoli, A.; Gerardin, S.; Simoen, Eddy; Claeys, Cor; Meneghesso, G. (2008) -
ESD sensitivity of 65-nm fully depleted SOI MOSFETs with different strain-inducing techniques
Griffoni, A.; Tazzoli, A.; Gerardin, S.; Simoen, Eddy; Claeys, Cor; Meneghesso, G. (2008) -
Impact of radiation on the operation and reliability of deep submicron CMOS technologies
Claeys, Cor; Put, Sofie; Griffoni, Alessio; Cester, A.; Gerardin, S.; Meneghesso, G.; Paccagnella, A.; Simoen, Eddy (2010) -
Microdose and breakdown effects induced by heavy ions on sub 20-nm triple gate SOI FETs
Griffoni, Alessio; Gerardin, S.; Meneghesso, G.; Paccagnella, A.; Simoen, Eddy; Put, Sofie; Claeys, Cor (2008)