Browsing by author "Sankaran, Kiroubanand"
Now showing items 1-20 of 51
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300mm IGZO nFETs with low-T Ru contacts for localized doping and increased BEOL compatibility
Kljucar, Luka; Smets, Quentin; van Setten, Michiel; Mitard, Jerome; Belmonte, Attilio; Dekkers, Harold; Teugels, Lieve; Mao, Ming; Puliyalil, Harinarayanan; del Agua Borniquel, Jose Ignacio; Delhougne, Romain; Sankaran, Kiroubanand; Tokei, Zsolt (2020) -
A Co/Ni-based perpendicular magnetic tunnel junction (p-MTJ) stack with improved reference layer for BEOL compatibility
Tomczak, Yoann; Lin, Tsann; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Liu, Enlong; Kim, Woojin; Sankaran, Kiroubanand; Pourtois, Geoffrey; Tsvetanova, Diana; Souriau, Laurent; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2016) -
A first principles study of the oscillatory behavior of tunnel magnetoresitance: On the impact of magnetic and tunneling barrier layers and of the capping metals
Sankaran, Kiroubanand; Swerts, Johan; Couet, Sebastien; Furnemont, Arnaud; Stokbro, Kurt; Pourtois, Geoffrey (2016) -
Ab initio screening of metallic MAX ceramics for advanced interconnect applications
Sankaran, Kiroubanand; Moors, Kristof; Tokei, Zsolt; Adelmann, Christoph; Pourtois, Geoffrey (2021) -
Ab-intio based electron-phonon scattering for 2D materials within the NEGF framework
Gaddemane, Gautam; Duflou, Rutger; Sankaran, Kiroubanand; Pourtois, Geoffrey; Houssa, Michel; Afzalian, Aryan (2021) -
Alternative metals for advanced interconnects
Adelmann, Christoph; Wen, Liang Gong; Peter, Antony; Siew, Yong Kong; Dutta, Shibesh; Croes, Kristof; Swerts, Johan; Popovici, Mihaela Ioana; Sankaran, Kiroubanand; Pourtois, Geoffrey; Van Elshocht, Sven; Boemmels, Juergen; Tokei, Zsolt (2014-10) -
Alternative metals for advanced interconnects
Adelmann, Christoph; Wen, Liang Gong; Peter, Antony; Siew, Yong Kong; Croes, Kristof; Swerts, Johan; Popovici, Mihaela Ioana; Sankaran, Kiroubanand; Pourtois, Geoffrey; Van Elshocht, Sven; Boemmels, Juergen; Tokei, Zsolt (2014) -
Alternative metals: from ab initio screening to calibrated narrow line models
Adelmann, Christoph; Sankaran, Kiroubanand; Dutta, Shibesh; Gupta, Anshul; Kundu, Shreya; Jamieson, Geraldine; Moors, Kristof; Pinna, Nicolo; Ciofi, Ivan; Van Elshocht, Sven; Boemmels, Juergen; Boccardi, Guillaume; Wilson, Chris; Pourtois, Geoffrey; Tokei, Zsolt (2018) -
An atomistic view of a nanoelectronic world
Pourtois, Geoffrey; Clima, Sergiu; Sankaran, Kiroubanand; Mees, Maarten; De Gendt, Stefan; Heyns, Marc (2012) -
Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon
Eyben, Pierre; Clemente, Francesca; Vanstreels, Kris; Pourtois, Geoffrey; Sankaran, Kiroubanand; Clarysse, Trudo; Mody, Jay; Duriau, Edouard; Hantschel, Thomas; Vandervorst, Wilfried; Mylvaganam, Kausala; Zhang, Liangchi (2010) -
Analysis and modeling of the HV-SSRM nanocontact on silicon
Eyben, Pierre; Clemente, Francesca; Vanstreels, Kris; Pourtois, Geoffrey; Sankaran, Kiroubanand; Clarysse, Trudo; Mody, Jay; Duriau, Edouard; Hantschel, Thomas; Vandervorst, Wilfried; Mylvaganam, Kausala; Zhang, Liangchi (2009) -
BEOLC compatiblehigh tunnel magneto resistance perpendicula magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap
Swerts, Johan; Mertens, Sofie; Lin, Tsann; Couet, Sebastien; Tomczak, Yoann; Sankaran, Kiroubanand; Pourtois, Geoffrey; Kim, Woojin; Meersschaut, Johan; Souriau, Laurent; Radisic, Dunja; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2015) -
Demonstration of a Free-layer Developed With Atomistic Simulations Enabling BEOL Compatible VCMA-MRAM with a Coefficient >= 100fJ/Vm
Carpenter, Robert; Kim, Woojin; Sankaran, Kiroubanand; Ao, Nan; Ben Chroud, Mohamed; Kumar, A.; Trovato, Anna; Pourtois, Geoffrey; Couet, Sebastien; Kar, Gouri Sankar (2021) -
Electronic properties of hydrogenated silicene and germanene
Houssa, Michel; Scalise, Emilio; Sankaran, Kiroubanand; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre (2011) -
Enabling BEOL compatibility in top-pinned STT-MRAM
Carpenter, Robert; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Hon, Kwan; Liu, Enlong; Sankaran, Kiroubanand; Rao, Siddharth; Kim, Woojin; Garello, Kevin; Kundu, Shreya; Souriau, Laurent; Yasin, Farrukh; Houshmand Sharifi, Shamin; Van Elshocht, Sven; Crotti, Davide; Kar, Gouri Sankar (2019) -
Enhancement of concentration of XeV and GeV centers in microcrystalline diamond films through He+ irradiation
Chakraborty, T.; Srinivasu, K.; Nongjai, R.; Asokan, K.; Chen, C. H.; Niu, H.; Sankaran, Kiroubanand; Haenen, Ken (2021) -
Evidence of magnetostrictive effects on STT-MRAM performances by atomistic and spin modeling
Sankaran, Kiroubanand; Swerts, Johan; Carpenter, Robert; Couet, Sebastien; Garello, Kevin; Evans, Richard F. L.; Rao, Siddharth; Kim, Woojin; Kundu, Shreya; Crotti, Davide; Kar, Gouri Sankar; Pourtois, Geoffrey (2018) -
Experimental observation of back-hopping with reference layer flipping by high-voltage pulse in perpendicular magnetic tunnel junctions
Kim, Woojin; Couet, Sebastien; Swerts, Johan; Lin, Tsann; Tomczak, Yoann; Souriau, Laurent; Tsvetanova, Diana; Sankaran, Kiroubanand; Donadio, Gabriele Luca; Crotti, Davide; Van Beek, Simon; Rao, Siddharth; Goux, Ludovic; Kar, Gouri Sankar; Furnemont, Arnaud (2016) -
Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations
Sankaran, Kiroubanand; Clima, Sergiu; Mees, Maarten; Pourtois, Geoffrey (2014) -
Exploring alternative metals to Cu and W for interconnects: an ab initio insight
Sankaran, Kiroubanand; Clima, Sergiu; Mees, Maarten; Adelmann, Christoph; Tokei, Zsolt; Pourtois, Geoffrey (2014)