Browsing by author "Skorupa, W."
Now showing items 1-6 of 6
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Millisecond flash lamp annealing of shallow implanted layers in Ge
Wündisch, C.; Posselt, M.; Schmidt, B.; Heera, V.; Schumann, T.; Mücklich, A.; Grötzschel, R.; Skorupa, W.; Clarysse, Trudo; Simoen, Eddy; Hortenbach, H. (2009) -
Millisecond flash lamp annealing of ultrashallow implanted layers in Ge
Posselt, M.; Wündisch, C.; Schmidt, B.; Schumann, T.; Mücklich, A.; Skorupa, W.; Clarysse, Trudo; Simoen, Eddy; Hortenbach, H. (2009) -
n+ doping of Ge by P or As implantation and flash-lamp annealing
Wündisch, C.; Posselt, M.; Anwand, W.; Schmidt, B.; Grötzschel, R.; Mücklich, A.; Skorupa, W.; Simoen, Eddy; Clarysse, Trudo; Satta, Alessandra; Hortenbach, H.; Möller, A.; Pelzing, P. (2008) -
Proton irradiation effects in silicon devices
Simoen, Eddy; Vanhellemont, Jan; Alaerts, André; Claeys, Cor; Gaubas, Eugenijus; Kaniava, Arvydas; Ohyama, Hidenori; Sunaga, H.; Nahsiyama, I.; Skorupa, W. (1997) -
Proton irradiation effects in silicon junction diodes and charge-coupled devices
Simoen, Eddy; Vanhellemont, Jan; Alaerts, André; Claeys, Cor; Gaubas, Eugenijus; Kaniava, Arvydas; Ohyama, Hidenori; Sunaga, H.; Nahsiyama, I.; Skorupa, W. (1997) -
RTA and FLA of Ultra-shallow implanted layers in Ge
Wündisch, C.; Posselt, M.; Anwand, W.; Schmidt, B.; Mücklich, A.; Skorupa, W.; Clarysse, Trudo; Simoen, Eddy (2008)