Browsing by author "Hollaender, Bernd"
Now showing items 1-5 of 5
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Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures
Morschbacher, Mario; da Silva, Douglas; Fichtner, Paulo; Zawislak, Fernando; Hollaender, Bernd; Luysberg, Martina; Mantl, Siegfried; Caymax, Matty; Loo, Roger (2004) -
Fabrication, doping and characterization of strained silicon on SiO2 by ion beam techniques
Hollaender, Bernd; Buca, Dan; Trinkaus, H.; Mantl, Siegfried; Loo, Roger; Reiche, Manfred (2008) -
Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(110) and Si(110)
Hollaender, Bernd; Minamisawa, R.; Buca, Dan; Trinkaus, H; Mantl, Siegfried; Loo, Roger; Hartmann, Jean-Michel (2010) -
Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources
Hueging, Norbert; Luysberg, Martina; Urban, Knut; Buca, Dan; Hollaender, Bernd; Mantl, Siegfried; Morschbacher, Marcio; Fichtner, Paulo; Loo, Roger; Caymax, Matty (2005) -
The role of internal dislocation sources for the strain ralaxation of pseudomorphic SiGe/Si structures
Luysberg, Martina; Hueging, Norbert; Lenk, Steffi; Buca, Dan; Hollaender, Bernd; Mantl, Siegfried; Marcio, J; Fichtner, Paulo; Loo, Roger; Caymax, Matty (2004)