Browsing by author "Faifer, V.N."
Now showing items 1-7 of 7
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Accurate electrical activation characterization of CMOS ultra-shallow profiles
Clarysse, Trudo; Dortu, Fabian; Vanhaeren, Danielle; Hoflijk, Ilse; Geenen, Luc; Janssens, Tom; Loo, Roger; Vandervorst, Wilfried; Pawlak, Bartek; Ouzeaud, V.; Defranoux, C.; Faifer, V.N.; Current, M.I. (2004) -
Influence of halo implant on leakage current and sheet resistance of ultra-shallow p-n junctions
Faifer, V.N.; Schroder, D.K.; Current, M.I.; Clarysse, Trudo; Timans, P.J.; Zangerle, T.; Vandervorst, Wilfried; Wong, T.M.H.; Moussa, Alain; McCoy, S.; Gelpey, J.; Lerch, W.; Paul, S.; Bolze, D. (2007) -
Influence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions
Faifer, V.N.; Schroder, D.K.; Current, M.I.; Clarysse, Trudo; Timans, P.J.; Zangerle, T.; Vandervorst, Wilfried; Wong, T.M.H.; Moussa, Alain; McCoy, S.; Gelpey, S.; Lerch, W. (2007-09) -
Insights in junction photovoltage based sheet resistance measurements for advanced complementary metal-oxide semiconductor
Clarysse, Trudo; Moussa, Alain; Zangerle, Thomas; Schaus, Frederic; Vandervorst, Wilfried; Faifer, V.N.; Current, M.I. (2008) -
Junction photovoltage (JPV) techniques for ultra-shallow junction characterization
Faifer, V.N.; Current, M.I.; Schroder, D.K.; Clarysse, Trudo; Vandervorst, Wilfried (2007) -
Leakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrology
Faifer, V.N.; Schroder, D.K.; Current, M.I.; Clarysse, Trudo; Timans, P.J.; Zangerle, T.; Vandervorst, Wilfried; Wong, T.M.H.; Moussa, Alain; McCoy, S.; Gelpey, J.; Lerch, W.; Paul, S.; Bolze, D. (2007) -
On the activation mechanisms of sub-melt laser anneals
Clarysse, Trudo; Bogdanowicz, Janusz; Goossens, Jozefien; Moussa, Alain; Rosseel, Erik; Vandervorst, Wilfried; Petersen, D.H.; Lin, R.; Nielsen, P.F.; Hansen, O.; Defranoux, C.; Vertikov, A.; Gostein, M.; Bennett, N.S.; Cowern, N.E.B.; Faifer, V.N. (2008)