Browsing by author "Brunco, David"
Now showing items 41-60 of 65
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Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?
Simoen, Eddy; Brouwers, Gijs; Yang, Rui; Eneman, Geert; Bargallo Gonzalez, Mireia; Leys, Frederik; De Jaeger, Brice; Mitard, Jerome; Brunco, David; Souriau, Laurent; Cody, Nyles; Thomas, Shawn; Lajaunie, Luc; David, Marie-Laure (2009) -
Materials and electrical characterization of molecular beam deposited CeO2
Brunco, David; dimoulas, A.; Boukos, N.; Houssa, Michel; Conard, Thierry; Martens, Koen; Zhao, Chao; Bellenger, Florence; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007-07) -
Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks
Li, Zilan; Schram, Tom; Pantisano, Luigi; Stesmans, Andre; Conard, Thierry; Shamuilia, Sheron; Afanasiev, Valeri; Akheyar, Amal; Van Elshocht, Sven; Brunco, David; Deweerd, Wim; Naoki, Yamada; Lehnen, Peer; De Gendt, Stefan; De Meyer, Kristin (2007) -
Observation and suppression of nickel germanide overgrowth on germanium substrates with patterned SiO2 structures
Brunco, David; Opsomer, Karl; De Jaeger, Brice; Winderickx, Gillis; Verheyden, Kurt; Meuris, Marc (2008) -
Optimization of epitaxial Si passivation for Ge p-MOSFETs
Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Brunco, David; Leys, Frederik; Winderickx, Gillis; Pourtois, Geoffrey; Houssa, Michel; Meuris, Marc; Heyns, Marc (2008) -
Performance and reliability of HfALOx-based interpoly dielectrics for floating-gate flash memory
Govoreanu, Bogdan; Wellekens, Dirk; Haspeslagh, Luc; Brunco, David; De Vos, Joeri; Ruiz Aguado, Daniel; Blomme, Pieter; van der Zanden, Koen; Van Houdt, Jan (2008) -
Performance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si fins
Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Franco, Jacopo; Lee, Jae Woo; Brunco, David; Eneman, Geert; Witters, Liesbeth; Mitard, Jerome; Kubicek, Stefan; Devriendt, Katia; Tsvetanova, Diana; Milenin, Alexey; Vrancken, Christa; Geypen, Jef; Bender, Hugo; Groeseneken, Guido; Vandervorst, Wilfried; Barla, Kathy; Collaert, Nadine; Horiguchi, Naoto; Thean, Aaron (2014) -
Quantification of drain extension leakage in a scaled bulk germanium pMOS technology
Eneman, Geert; De Jaeger, Brice; Simoen, Eddy; Brunco, David; Hellings, Geert; Mitard, Jerome; De Meyer, Kristin; Meuris, Marc; Heyns, Marc (2009) -
Quantum well band calculations and their impact on device isolation and work function requirements for SiGe and III/V strained heterostructure FinFETs
Eneman, Geert; Brunco, David; Roussel, Philippe; Hellings, Geert; Kubicek, Stefan; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2013) -
Record Ion/Ioff performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability
Mitard, Jerome; De Jaeger, Brice; Leys, Frederik; Hellings, Geert; Martens, Koen; Eneman, Geert; Brunco, David; Loo, Roger; Shamiryan, Denis; Vandeweyer, Tom; Winderickx, Gillis; Vrancken, Evi; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Meuris, Marc; Heyns, Marc (2008) -
Scaling down the interpoly dielectric for next generation flash memory: challenges and opportunities
Govoreanu, Bogdan; Brunco, David; Van Houdt, Jan (2005-05) -
Scaling down the interpoly dielectric for next generation flash memory: challenges and opportunities
Govoreanu, Bogdan; Brunco, David; Van Houdt, Jan (2005) -
Selective epitaxial deposition of Ge on Si: facet formation and how to avoid it
Wang, Gang; Leys, Frederik; Loo, Roger; Caymax, Matty; Brunco, David; Meuris, Marc; Vandervorst, Wilfried; Heyns, Marc (2008) -
Short-channel epitaxial germanium PMOS transistors
Eneman, Geert; De Jaeger, Brice; Hellings, Geert; Mitard, Jerome; Brunco, David; Simoen, Eddy; Wang, Gang; Loo, Roger; Caymax, Matty; Claeys, Cor; De Meyer, Kristin; Meuris, Marc; Heyns, Marc (2009) -
Short-channel epitaxial germanium pMOS transistors
Eneman, Geert; De Jaeger, Brice; Wang, Gang; Mitard, Jerome; Hellings, Geert; Brunco, David; Simoen, Eddy; Loo, Roger; Caymax, Matty; Claeys, Cor; De Meyer, Kristin; Meuris, Marc; Heyns, Marc (2010) -
Silicides and Germanides for Nano-CMOS Applications
Kittl, Jorge; Opsomer, Karl; Torregiani, Cristina; Demeurisse, Caroline; Mertens, Sofie; Brunco, David; Van Dal, Mark; Lauwers, Anne (2008) -
Source/drain junction integration issues in submicron Ge MOSFETs
Simoen, Eddy; Satta, Alessandra; Eneman, Geert; Brunco, David; De Jaeger, Brice; Opsomer, Karl; Meuris, Marc; Claeys, Cor (2008) -
Strained germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement fin process
Witters, Liesbeth; Mitard, Jerome; Loo, Roger; Eneman, Geert; Mertens, Hans; Brunco, David; Lee, Seung Hun; Waldron, Niamh; Hikavyy, Andriy; Favia, Paola; Milenin, Alexey; Shimura, Yosuke; Vrancken, Christa; Bender, Hugo; Horiguchi, Naoto; Barla, Kathy; Thean, Aaron; Collaert, Nadine (2013-12) -
Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond
Eneman, Geert; Brunco, David; Witters, Liesbeth; Vincent, Benjamin; Favia, Paola; Hikavyy, Andriy; De Keersgieter, An; Mitard, Jerome; Loo, Roger; Veloso, Anabela; Richard, Olivier; Bender, Hugo; Lee, Seung Hun; Van Dal, Mark; Kabir, Nafees; Vandervorst, Wilfried; Caymax, Matty; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2012) -
Stress simulations of Si- and Ge-channel FinFETs for the 14 nm-node and beyond
Eneman, Geert; Brunco, David; Witters, Liesbeth; Vincent, Benjamin; Favia, Paola; Hikavyy, Andriy; De Keersgieter, An; Mitard, Jerome; Loo, Roger; Veloso, Anabela; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Caymax, Matty; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2013)