Browsing by author "Thomas, S."

Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

Simoen, Eddy; Brouwers, Gijs; Eneman, Geert; Bargallo Gonzalez, Mireia; De Jaeger, Brice; Mitard, Jerome; Brunco, David; Souriau, Laurent; Cody, N.; Thomas, S.; Meuris, Marc (2008)

Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

Serra, N.; Conzatti, F.; Esseni, D.; De Michielis, M.; Palestri, P.; Selmi, L.; Thomas, S.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R.; Witters, Liesbeth; Hikavyy, Andriy; Hytch, M. J.; Houdellier, F.; Snoeck, E.; Wang, T. J.; Lee, W. C.; Vellianitis, Georgios; Van Dal, Mark; Duriez, Blandine; Doornbos, Gerben; Lander, Rob (2009)

Factors influencing the leakage current in embedded SiGe source/drain junctions

Simoen, Eddy; Bargallo Gonzalez, Mireia; Vissouvanadin Soubaretty, Bertrand; Chowdhury, Mohammad Kamruzzaman; Verheyen, Peter; Hikavyy, Andriy; Bender, Hugo; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.; Lu, J.P.; Weijtmans, J.W.; Wise, R. (2008)

Improved thermal stability of Ni-silicides on Si:C epitaxial layers

Machkaoutsan, Vladimir; Mertens, Sofie; Bauer, R.; Lauwers, Anne; Verheyden, Kurt; Vanormelingen, Koen; Verheyen, Peter; Loo, Roger; Caymax, Matty; Jakschik, Stefan; Theodore, D.; Absil, Philippe; Thomas, S.; Granneman, E.H.A. (2007)

Thermal stability of Pt and C-doped NiSi films

Machkaoutsan, Vladimir; Pagès, X.; Bauer, M.; Thomas, S.; Mertens, Sofie; Verheyden, K.; Vanormelingen, Koen; Granneman, E. (2007)