Browsing by author "Benbakhti, Brahim"
Now showing items 1-12 of 12
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A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs
Ma, Jigang; Zhang, Wei Dong; Zhang, Jian Fu; Benbakhti, Brahim; Li, Zhigang; Mitard, Jerome; Arimura, Hiroaki (2016) -
Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
Ma, J.; Zhang, J.F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei Dong; Zheng, Xue Feng; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2014) -
Design and analysis of a new In53Ga47As implant-free quantum-well device structure
Benbakhti, Brahim; Kalna, Karol; Chan, KahHou; Asenov, Asen; Hellings, Geert; Eneman, Geert; De Meyer, Kristin; Meuris, Marc (2010) -
Design and analysis of the In sub(0.53)Ga sub(0.47)As implant-free quantum-well device structure
Benbakhti, Brahim; Kalna, Karol; Chan, KanHou; Towie, Ewan; Hellings, Geert; Eneman, Geert; De Meyer, Kristin; Meuris, Marc; Asenov, Asen (2011) -
Energy distribution of positive charges in Al2O3/GeO2/Ge pMOSFETs
Ma, J; Zhang, J. F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2014) -
Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures
Benbakhti, Brahim; Ayubi-Moak, J.S.; Kalna, Karol; Lin, Dennis; Hellings, Geert; Brammertz, Guy; De Meyer, Kristin; Thayne, I.; Asenov, Asen (2010) -
Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution
Ma, Jigang; Chai, Zheng; Zhang, Wei Dong; Zhang, J. F.; Ji, Z.; Benbakhti, Brahim; Govoreanu, Bogdan; Simoen, Eddy; Goux, Ludovic; Belmonte, Attilio; Degraeve, Robin; Kar, Gouri Sankar; Jurczak, Gosia (2018) -
Monte Carlo analysis of In0.53Ga0.47As implant-free quantum-well device performance
Benbakhti, Brahim; Towie, E.; Kalna, Karol; Hellings, Geert; Eneman, Geert; De Meyer, Kristin; Meuris, Marc; Asenov, Asen (2010) -
Numerical analysis of the new implant-free quantum-well CMOS: dualLogic approach
Benbakhti, Brahim; Chan, KahHou; Towie, Ewan; Kalna, Karol; Riddet, Craig; Wang, Xingsheng; Eneman, Geert; Hellings, Geert; De Meyer, Kristin; Meuris, Marc; Asenov, Asen (2011) -
Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET
Benbakhti, Brahim; Martinez, Antonio; Kalna, Karol; Hellings, Geert; Eneman, Geert; De Meyer, Kristin; Meuris, Marc (2012) -
The implant-free quantum well field-effect-transistor: Harnessing the power of heterostructures
Hellings, Geert; Hikavyy, Andriy; Mitard, Jerome; Witters, Liesbeth; Benbakhti, Brahim; Alian, AliReza; Waldron, Niamh; Bender, Hugo; Eneman, Geert; Krom, Raymond; Loo, Roger; Heyns, Marc; Meuris, Marc; Hoffmann, Thomas Y.; De Meyer, Kristin (2011) -
The implant-free quantum well field-effect-transistor: harnessing the power of heterostructures
Hellings, Geert; Hikavyy, Andriy; Mitard, Jerome; Witters, Liesbeth; Benbakhti, Brahim; Alian, AliReza; Waldron, Niamh; Bender, Hugo; Eneman, Geert; Krom, Raymond; Schulze, Andreas; Vandervorst, Wilfried; Loo, Roger; Heyns, Marc; Meuris, Marc; Hoffmann, Thomas; De Meyer, Kristin (2012)