Browsing by author "Oliveira, Alberto"
Now showing items 1-12 of 12
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Device-based threading dislocation assessment in germanium hetero-epitaxy
Simoen, Eddy; Hsu, Brent; Eneman, Geert; Rosseel, Erik; Loo, Roger; Arimura, Hiroaki; Horiguchi, Naoto; Claeys, Cor; Wen, Wei-Chen; Nakashima, Hiroshi; Oliveira, Alberto; Agopian, Paula G.D.; Martino, Joao (2019) -
Experimental comparison between relaxed and strained Ge pFinFETs
Oliveira, Alberto; Agopian, P.G.D.; Martino, Joao A.; Simoen, Eddy; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Claeys, Cor (2017) -
Generation-recombination noise in advanced CMOS devices
Simoen, Eddy; Oliveira, Alberto; Boudier, Dimitri; Mitard, Jerome; Witters, Liesbeth; Veloso, Anabela; Agopian, Paula; Martino, Joao; Carin, Regis; Langer, Robert; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2016) -
High lateral electric field impact on the performance of Si-platform-based Ge pFinFETs
Oliveira, Alberto; Agopian, Paula GD; Martino, Joao Antonio; Simoen, Eddy; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Claeys, Cor (2017) -
Horizontal, stacked or vertical silicon nanowires: Does it Matter from a Low-Frequency Noise Perspective
Simoen, Eddy; Oliveira, Alberto; Agopian, Paula G der; Ritzenthaler, Romain; Mertens, Hans; Horiguchi, Naoto; Martino, Joao A; Claeys, Cor; Veloso, Anabela (2021) -
Low temperature effect on strained and relaxed Ge pFinFETs STI last processes
Oliveira, Alberto; Simoen, Eddy; Agopian, Paula G.D.; Martino, Joao A.; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2016) -
Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs
Oliveira, Alberto; Agopian, Paula; Martino, Joao; Simoen, Eddy; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Claeys, Cor (2017) -
Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform
Claeys, Cor; Agopian, Paula; Alian, AliReza; Arimura, Hiroaki; Fang, Wen; Martino, Joao; Mitard, Jerome; Neves, Felipe; Oliveira, Alberto; Simoen, Eddy (2016) -
Low-frequency noise assessment of different Ge pFinFET STI processes
Oliveira, Alberto; Simoen, Eddy; Mitard, Jerome; Agopian, Gaula G.D.; Martino, Joao Antonio; Langer, Robert; Witters, Liesbeth; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2016) -
Low-frequency noise characterization of germanium n-channel finFETs
Oliveira, Alberto; Arimura, Hiroaki; Boccardi, Guillaume; Collaert, Nadine; Claeys, Cor; Horiguchi, Naoto; Simoen, Eddy (2020) -
Low-frequency noise in vertically stacked Si n-channel nanosheet FETs
Oliveira, Alberto; Veloso, Anabela; Claeys, Co; Horiguchi, Naoto; Simoen, Eddy (2020) -
Scaled, novel effective workfunction metal gate stacks for advanced Low-VT, gate-all-around vertically stacked nanosheet FETs with reduced vertical distance between sheets
Veloso, Anabela; Simoen, Eddy; Oliveira, Alberto; Vaisman Chasin, Adrian; Chen, S.-C.; Lin, Y.; Miyashita, T.; Kim, M.; Jang, Doyoung; Ritzenthaler, Romain; Zhou, Daisy; Mertens, Hans; Pena, Vanessa; Santoro, Gaetano; Kenis, Karine; Sebaai, Farid; Mannaert, Geert; Devriendt, Katia; Hopf, Toby; Versluijs, Janko; Richard, Olivier; Machillot, Jerome; Yoshida, Naomi; Horiguchi, Naoto (2019)