Now showing items 1-4 of 4

    • 1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D 

      Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011)
    • Gate-last vs. gate-first technology for aggressively scaled EOT Logic/RF CMOS 

      Veloso, Anabela; Ragnarsson, Lars-Ake; Cho, Moon Ju; Devriendt, Katia; Kellens, Kristof; Sebaai, Farid; Suhard, Samuel; Brus, Stephan; Crabbe, Yvo; Schram, Tom; Rohr, Erika; Paraschiv, Vasile; Eneman, Geert; Kauerauf, Thomas; Dehan, Morin; Hong, Sug-Hun; Yamaguchi, Shinpei; Takeoka, Shinji; Higuchi, Yuichi; Tielens, Hilde; Van Ammel, Annemie; Favia, Paola; Bender, Hugo; Franquet, Alexis; Conard, Thierry; Li, X.; Pey, K.-L.; Struyf, Herbert; Mertens, Paul; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011)
    • On the origin of mobility reduction in ultrathin EOT HK/MG CMOS devices: Impact from gate-stack and device architecture 

      Ragnarsson, Lars-Ake; Mitard, Jerome; Hong, Sug-Hun; Takeoka, Shinji; Tseng, Joshua; Wang, Wei-E; Yamaguchi, Shinpei; Trojman, Lionel; Kauerauf, Thomas; De Keersgieter, An; Schram, Tom; Rohr, Erika; Collaert, Nadine; Jurczak, Gosia; Bourdelle, Konstantin; Nguyen, B-Y; Absil, Philippe; Hoffmann, Thomas Y. (2011)
    • On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics 

      Ragnarsson, Lars-Ake; Mitard, Jerome; Kauerauf, Thomas; De Keersgieter, An; Schram, Tom; Rohr, Erika; Collaert, Nadine; Jurczak, Gosia; Hong, Sug-Hun; Tseng, Joshua; Wang, Wei-E; Trojman, Lionel; Bourdelle, Konstantin; Nguyen, B-Y; Absil, Philippe; Hoffmann, Thomas Y. (2011)