Browsing by author "Vanderheyden, Annelies"
Now showing items 1-9 of 9
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15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Mitard, Jerome; Witters, Liesbeth; Loo, Roger; Lee, Seung Hun; Sun, J.W.; Franco, Jacopo; Ragnarsson, Lars-Ake; Brand, A.; Lu, X.; Yoshido, N.; Eneman, Geert; Brunco, David; Vorderwestner, M.; Storck, P.; Milenin, Alexey; Hikavyy, Andriy; Waldron, Niamh; Favia, Paola; Vanhaeren, Danielle; Vanderheyden, Annelies; Richard, Olivier; Mertens, Hans; Arimura, Hiroaki; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Eyben, Pierre; Barla, Kathy; Lee, Sun Ghil; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2014) -
1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures
Kandaswamy, Prem Kumar; Saripalli, Yoga; Van Hove, Marleen; You, Shuzhen; Zhao, Ming; Liang, Hu; Vanhaeren, Danielle; Vanderheyden, Annelies; Schulze, Andreas; Eyben, Pierre; Decoutere, Stefaan; Langer, Robert; Vandervorst, Wilfried (2014) -
Interplay between statistical variability and reliability in contemporary p-MOSFETs: measurements vs. simulated
Hussin, Razaidi; Amoroso, Salvatore; Gerrer, Louis; Kaczer, Ben; Weckx, Pieter; Franco, Jacopo; Vanderheyden, Annelies; Vanhaeren, Danielle; Horiguchi, Naoto; Asenov, Asen (2014) -
MOCVD growth of DH-HEMT buffers with low-temperature ALN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Van Hove, Marleen; Venegas, Rafael; Vrancken, Evi; Favia, Paola; Vanderheyden, Annelies; Vanhaeren, Danielle; Saripalli, Yoga; Decoutere, Stefaan; Langer, Robert (2015) -
MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Van Hove, Marleen; Venegas, Rafael; Vrancken, Evi; Favia, Paola; Vanderheyden, Annelies; Vanhaeren, Danielle; Saripalli, Yoga; Decoutere, Stefaan; Langer, Robert (2016) -
Reliability aware simulation flow: from TCAD calibration to circuit level analysis
Hussin, Razzaidi; Gerrer, Louis; Ding, Jie; Amaroso, Salvatore; Wang, Liping; Simicic, Marko; Weckx, Pieter; Franco, Jacopo; Vanderheyden, Annelies; Vanhaeren, Danielle; Horiguchi, Naoto; Kaczer, Ben; Asenov, Asen (2015) -
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow
Hussin, Razaidi; Gerrer, Louis; Ding, Jie; Wang, Liping; Amoroso, Salvatore; Cheng, Binjie; Weckx, Pieter; Simicic, Marko; Franco, Jacopo; Vanderheyden, Annelies; Vanhaeren, Danielle; Horiguchi, Naoto; Kaczer, Ben; Asenov, Asen (2015) -
TCAD-based methodology for reliability assessment of nanoscaled MOSFETs
Hussin, Razaidi; Gerrer, Louis; Amoroso, Salvatore; Wang, Liping; Weckx, Pieter; Franco, Jacopo; Vanderheyden, Annelies; Vanhaeren, Danielle; Horiguchi, Naoto; Kaczer, Ben; Asenov, Asen (2015)