Browsing by author "Zhang, W. D."
Now showing items 1-6 of 6
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A single device based Voltage Step Stress (VSS) technique for fast reliability screening
Ji, Z.; Zhang, J. F.; Zhang, W. D.; Zhang, X.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido; Ren, P.; Wang, R.; Huang, R. (2014) -
Development of a technique for characterizing bias temperature unstability-induced device-to-device variation at SRAM-relevant conditions
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W. D.; Kaczer, Ben; Schram, Tom; Ritzenthaler, Romain; Groeseneken, Guido; Asenov, A. (2014) -
Energy distribution of positive charges in gate dielectric: probing technique and impacts of different defects
Hatta, S. W. M.; Ji, J.; Zhang, J. F.; Duan, M.; Zhang, W. D.; Soin, N.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2013) -
Interface states beyond band gap and their impact on charge carrier mobility in MOSFETs
Ji, Z.; Zhang, J. F.; Zhang, W. D.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2012) -
New insights into defect loss, slowdown, and device lifetime enhancement
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W. D.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2013) -
New insights into defect loss, slowdown, and device lifetime enhancement
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W. D.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2013)