Browsing by author "Takizawa, H."
Now showing items 1-8 of 8
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20-MeV alpha ray effects in AlGaAsP p-HEMTs
Ohyama, Hidenori; Simoen, Eddy; Claeys, Cor; Takami, Y.; Kobayashi, K.; Yoneoka, M.; Nakabayashi, M.; Hakata, T.; Takizawa, H. (2000) -
Electron-irradiation effects of CMOS integrated circuits with leakage current compensation
Hayama, Kiyoteru; Ohyama, Hidenori; Simoen, Eddy; Claeys, Cor; Takizawa, H. (2000) -
High-energy boron-implantation and proton-irradiation effects in diodes with shallow trench isolation
Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Hayama, Kiyoteru; Kobayashi, K.; Ohyama, Hidenori; Takizawa, H.; Kokkoris, M.; Kossionides, E.; Fanourakis, G.; Mohammadzadeh, A. (2000) -
Influence of boron implantation dose on the mechanical stress in polycrystalline silicon films
Nakabayashi, M.; Ikegami, M.; Ohyama, Hidenori; Kobauashi, K.; Yoneoka, M.; Simoen, Eddy; Claeys, Cor; Takami, Y.; Sunaga, H.; Takizawa, H. (2000) -
Influence of mechanical stress on the electrical performance of polycrystalline-silicon resistors
Nakabayashi, M.; Ohyama, Hidenori; Kobayashi, K.; Yoneoka, M.; Simoen, Eddy; Claeys, C.; Takami, Y.; Sunaga, H.; Takizawa, H. (2000) -
Radiation damage of n-MOSFETs fabricated in a BiCMOS process
Ohyama, Hidenori; Kobayashi, K.; Nakabayashi, M.; Simoen, Eddy; Claeys, Cor; Takami, Y.; Yoneoka, M.; Hayama, Kiyoteru; Takizawa, H.; Kohiki, S. (2000) -
Radiation damage of N-MOSFETS fabricated in a BiCMOS process
Kobayashi, K.; Ohyama, Hidenori; Yoneoka, M.; Hayama, Kiyoteru; Nakabayashi, M.; Simoen, Eddy; Claeys, Cor; Takami., Y.; Takizawa, H.; Kohiki, S. (2001) -
Radiation source dependence of degradation in shallow trench isolation diodes
Hayama, Kiyoteru; Ohyama, Hidenori; Kobayasi, K.; Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Takami, Y.; Takizawa, H.; Mohammadzadeh, A. (2000)