Browsing by author "Fedorenko, Yanina"
Now showing items 1-5 of 5
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ALD La-based oxides for Vt-tuning in high-k/metal gate stacks
Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Tois, E.; Delabie, Annelies; Ragnarsson, Lars-Ake; Yu, HongYu; Nyns, Laura; Adelmann, Christoph; Van Elshocht, Sven (2007) -
Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications
Delabie, Annelies; Nyns, Laura; Bellenger, Florence; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Lin, Dennis; Meuris, Marc; Ragnarsson, Lars-Ake; Sioncke, Sonja; Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Van Elshocht, Sven; De Gendt, Stefan (2007) -
Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O
Fedorenko, Yanina; Swerts, Johan; Maes, Jan; Tois, E.; Haukka, S.; Wang, C.G; Wilk, G.; Delabie, Annelies; Deweerd, Wim; De Gendt, Stefan (2007) -
Atomic layer deposition of hafnium silicate gate dielectric layers
Delabie, Annelies; Pourtois, Geoffrey; Caymax, Matty; De Gendt, Stefan; Ragnarsson, Lars-Ake; Heyns, Marc; Fedorenko, Yanina; Swerts, Johan; Maes, Jan (2007) -
Impact of Hf-precursor choice on scaling and performance of high-k gate dielectrics
Maes, Jan; Fedorenko, Yanina; Delabie, Annelies; Ragnarsson, Lars-Ake; Swerts, Johan; Nyns, Laura; Van Elshocht, Sven; Wang, C.; Wilk, G. (2007)