Browsing by author "Khazaka, Rami"
Now showing items 1-7 of 7
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Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
Rosseel, Erik; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Tirrito, Matteo; Douhard, Bastien; Richard, Olivier; Horiguchi, Naoto; Khazaka, Rami (2020-09) -
Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
Rosseel, Erik; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Tirrito, Matteo; Douhard, Bastien; Richard, Olivier; Horiguchi, Naoto; Khazaka, Rami (2020-07) -
Epitaxial growth of Ga doped SiGe for reduction of contact resistance in finFET source/drain materials
Margetis, Joe; Kohen, David; Porret, Clément; Petersen Barbosa Lima, Lucas; Khazaka, Rami; Loo, Roger; Tolle, John (2019) -
Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials
Margetis, Joe; Kohen, David; Porret, Clément; Petersen Barbosa Lima, Lucas; Khazaka, Rami; Rengo, Gianluca; Loo, Roger; Tolle, John; Demos, Alex (2019-10) -
Improving the electrical properties of epitaxial SiGe:B with excimer laser annealing treatments
Huang, Yan-Hua; Porret, Clément; Hikavyy, Andriy; Rengo, Gianluca; Petersen Barbosa Lima, Lucas; Khazaka, Rami; Kohen, David; Margetis, Joe; Tolle, John; Mazzamuto, Fulvio; Tabata, Toshiyuki; Heyns, Marc; Loo, Roger (2019) -
Investigation of low temperature SiP epitaxy on 300 mm Si substrates
Khazaka, Rami; Lima, Lucas; Rosseel, Erik; Hikavyy, Andriy; D'Costa, Vijay; Margetis, Joe; Tolle, John; Xie, Qi (2020) -
Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
Porret, Clément; Vohra, Anurag; Hikavyy, Andriy; Rosseel, Erik; Huang, Yan-Hua; Tirrito, Matteo; Kohen, David; Margetis, Joe; Tolle, John; Petersen Barbosa Lima, Lucas; Khazaka, Rami; Langer, Robert; Loo, Roger (2019)