Browsing by author "Ho, M.Y."
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A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
Alam, M.A.; Green, Martin; Ho, M.Y.; Vandervorst, Wilfried; Brijs, Bert; Conard, Thierry; Räisänen, P.I. (2002) -
Initial growth kinetics of ALD Al2O3 and HfO2 and post-annealing effects
Wilk, G.D.; Frank, M.; Ho, M.Y.; Green, Martin; Chabal, Y.J.; Raisanen, P.; Brijs, Bert; Sorsch, T.W. (2002) -
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)
Green, Martin; Ho, M.Y.; Busch, B.; Wilk, G.D.; Sorsch, T.; Conard, Thierry; Brijs, Bert; Vandervorst, Wilfried; Räisänen, P.I.; Muller, D.; Bude, M.; Grazul, J. (2002) -
Polarity dependent charge trapping in thin SiO2/Al2O3 gate staks with poly-Si gate electrodes: influence of high temperature annealing
Lucci, Luca; Pantisano, Luigi; Cartier, Eduard; Kerber, Andreas; Groeseneken, Guido; Ho, M.Y.; Green, Martin; Selmi, L. (2002)