Browsing by author "Schwalke, U."
Now showing items 1-6 of 6
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Characterization of the Vt-instability un SiO2 HFO2 gate dielectrics
Kerber, Andreas; Cartier, E.; Pantisano, Luigi; Rosmeulen, Maarten; Degraeve, Robin; Kauerauf, Thomas; Groeseneken, Guido; Maes, Herman; Schwalke, U. (2003) -
Charge trapping and dielectric reliability of SiO2/AI2O3 gate stacks with TiN electrodes
Kerber, Andreas; Cartier, Eduard; Degraeve, Robin; Roussel, Philippe; Pantisano, Luigi; Kauerauf, Thomas; Groeseneken, Guido; Maes, Herman; Schwalke, U. (2003) -
Charge trapping in SiO2/HfO2 gate dielctrics: comparison between charge-pumping and pulsed I-D-V-G
Kerber, A.; Cartier, E.; Pantisano, Luigi; Degraeve, Robin; Groeseneken, Guido; Maes, Herman; Schwalke, U. (2004) -
Charging instability in n-channel MOSFETs with SiO2/HfO2 gate dielectrics
Kerber, Andreas; Cartier, Eduard; Pantisano, Luigi; Degraeve, Robin; Groeseneken, Guido; Maes, Herman; Schwalke, U. (2002) -
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
Kerber, Andreas; Cartier, Eduard; Pantisano, Luigi; Degraeve, Robin; Kauerauf, Thomas; Kim, Young-Chang; Hou, A.; Groeseneken, Guido; Maes, Herman; Schwalke, U. (2003) -
Stress induced charge trapping effects in SiO2/Al2O3 gate stacks with TiN electrodes
Kerber, Andreas; Cartier, E.; Groeseneken, Guido; Maes, Herman; Schwalke, U. (2003)