Browsing by author "Kang, Xuanwu"
Now showing items 21-30 of 30
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Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance
Posthuma, Niels; You, Shuzhen; Liang, Hu; Ronchi, Nicolo; Kang, Xuanwu; Wellekens, Dirk; Saripalli, Yoga; Decoutere, Stefaan (2016) -
Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4
Derluyn, Joff; Van Hove, Marleen; Visalli, Domenica; Lorenz, Anne; Marcon, Denis; Srivastava, Puneet; Geens, Karen; Sijmus, Bram; Viaene, John; Kang, Xuanwu; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Borghs, Gustaaf; Germain, Marianne (2009-12) -
New-source-side breakdown mechanism in AlGaN/GaN insulated-Gate HEMTs
Bahl, Sandeep; Van Hove, Marleen; Kang, Xuanwu; Marcon, Denis; Zahid, Mohammed; Decoutere, Stefaan (2013) -
Photo-conductivity lock-in: A qualitative and quantitative analysis of measurement results
Cornagliotti, Emanuele; Kang, Xuanwu; John, Joachim; Beaucarne, Guy; Poortmans, Jef; Mertens, Robert (2008) -
Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs
Wu, Tian-Li; Franco, Jacopo; Marcon, Denis; De Jaeger, Brice; Bakeroot, Benoit; Kang, Xuanwu; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2016) -
Reliability of AlGaN/GaN HEMTs: permanent leakage current increase and output current drop
Marcon, Denis; Viaene, John; Favia, Paola; Bender, Hugo; Kang, Xuanwu; Lenci, Silvia; Stoffels, Steve; Decoutere, Stefaan (2012) -
Reliability of AlGaN/GaN HEMTs: permanent leakage current increase and output current drop
Marcon, Denis; Viaene, John; Favia, Paola; Bender, Hugo; Kang, Xuanwu; Lenci, Silvia; Stoffels, Steve; Decoutere, Stefaan (2013) -
Si trench around drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance
Srivastava, Puneet; Oprins, Herman; Van Hove, Marleen; Das, Jo; Malinowski, Pawel; Bakeroot, Benoit; Marcon, Denis; Visalli, Domenica; Kang, Xuanwu; Lenci, Silvia; Geens, Karen; Viaene, John; Cheng, Kai; Leys, Maarten; De Wolf, Ingrid; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2011) -
The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate
Wu, Tian-Li; Marcon, Denis; De Jaeger, Brice; Van Hove, Marleen; Bakeroot, Benoit; Lin, Dennis; Stoffels, Steve; Kang, Xuanwu; Roelofs, Robin; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
Hu, Jie; Stoffels, Steve; Zhao, Ming; Tallarico, Andrea Natale; Rossetto, Isabella; Meneghini, Matteo; Kang, Xuanwu; Bakeroot, Benoit; Kaczer, Ben; Decoutere, Stefaan; Groeseneken, Guido (2017)