Browsing by author "Alves Donaton, Ricardo"
Now showing items 21-27 of 27
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Process optimization and integration of trimethylsilane-deposited a-SiC:H and a-SiCO:H dielectric thin films for damascene processing
Gray, W.D.; Loboda, M.J.; Bremmer, J.N.; Struyf, Herbert; Lepage, Muriel; Van Hove, Marleen; Alves Donaton, Ricardo; Sleeckx, Erik; Stucchi, Michele; Lanckmans, Filip; Gao, Teng; Boullart, Werner; Coenegrachts, Bart; Maenhoudt, Mireille; Vanhaelemeersch, Serge; Meynen, H.; Maex, Karen (2003) -
Structural and electrical characterization of FeSix-layers (1 < X < 2) prepared by RTA of Fe layers sputtered on Si (100)
Libezny, Milan; Poortmans, Jef; Amesz, Peter Henk; Alves Donaton, Ricardo; Larsen, Kim Kyllesbech; Vandenabeele, Peter; Jonckx, Franky; Maex, Karen; Nijs, Johan (1995) -
Studies on XLK film characterization and integration in copper damascene processes
Iacopi, Francesca; Alves Donaton, Ricardo; Coenegrachts, Bart; Komiya, Takayuki; Struyf, Herbert; Lepage, Muriel; Van Aelst, Joke; Boullart, Werner; De Roest, David; Vos, Ingrid; Baklanov, Mikhaïl; Vereecke, Guy; Van Hove, Marleen; Stucchi, Michele; Tokei, Zsolt; Meynen, Herman; Bremmer, J. N.; Vanhaelemeersch, Serge; Maex, Karen (2001) -
The influence of Ti capping layers on CoSi2 formation in the presence of interfacial oxide
Detavernier, C.; Alves Donaton, Ricardo; Maex, Karen; Jin, S.; Bender, Hugo; Van Meirhaeghe, R.; Cardon, F. (1999) -
The kinetics and mechanism of the etching of CoSi2 in HF-based solutions
Baklanov, Mikhaïl; Badmaeva, I. A.; Alves Donaton, Ricardo; Sveshnikova, L. L.; Storm, Wolfgang; Maex, Karen (1996) -
Titanium silicidation and secondary defect annihilation in ion beam processed SiGe layers
Kyllesbech Larsen, K.; La Via, F.; Lombardo, S.; Raineri, Vito; Alves Donaton, Ricardo; Campisano, S. U. (1996) -
Titanium silicidation of submicron poly-SiGe runners
Alves Donaton, Ricardo; Stucchi, Michele; Jin, S.; Bender, Hugo; Maex, Karen; Vantomme, Andre; Langouche, G. (1998)