Browsing by author "Dekoster, Johan"
Now showing items 21-40 of 81
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Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osaku; Zaima, Shigeaki (2010) -
Formation of Ni(Ge1-ySny)/Ge1-xSnx/Ge contact for Ge1-xSnx source/drain Stressor
Nishimura, T.; Nakatsuka, O.; Shimura, Y.; Takeuchi, S.; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, S. (2010) -
GaN-Epi-Layer auf 200-mm-Si-Substraten fur LEDs
Cheng, Kai; Dekoster, Johan; Jun, Sung Won; Del-Agua-Borniquel, Jose-Ignacio (2011-08) -
GaN-Epi-Layer auf 200mm-Si-Substraten für LEDs
Cheng, Kai; Dekoster, Johan; Jun, Sung Won; del Agua Borniquel, Jose Ignacio (2011-08) -
GaN-on-Si: A scalable material system to realize cost effective next-generation solid state lighting and power devices
Decoutere, Stefaan; Osman, Haris; Dekoster, Johan; Dutta, Barundeb; Biesemans, Serge (2010) -
GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide
Merckling, Clement; Sun, Xiao; Alian, AliReza; Brammertz, Guy; Afanasiev, Valeri; Hoffmann, Thomas Y.; Heyns, Marc; Caymax, Matty; Dekoster, Johan (2011) -
Ge chemical vapor deposition on GaAs for low resistivity contacts
Vincent, Benjamin; Firrincieli, Andrea; Wang, Wei-E; Waldron, Niamh; Franquet, Alexis; Douhard, Bastien; Vandervorst, Wilfried; Clarysse, Trudo; Brammertz, Guy; Loo, Roger; Dekoster, Johan; Meuris, Marc; Caymax, Matty (2011) -
Ge1-xSnx stressors for strained-Ge CMOS
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Sakai, A.; Nakatsuka, Osaku; Zaima, Shigeaki (2011) -
Ge1-xSnx stressors for strained-Ge CMOS
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, Tsuyoshi; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010) -
GeSn channel nMOSFETs: material potential and technological outlook
Gupta, Somya; Vincent, Benjamin; Lin, Dennis; Gunji, M.; Firrincieli, Andrea; Gencarelli, Federica; Magyari-Kope, B.; Yang, B.; Douhard, Bastien; Delmotte, Joris; Franquet, Alexis; Caymax, Matty; Dekoster, Johan; Nishi, Y.; Saraswat, K.C. (2012) -
GeSn growth by CVD: challenges and opportunities
Vincent, Benjamin; Loo, Roger; Caymax, Matty; Dekoster, Johan (2010) -
GeSn: future applications and strategy
Loo, Roger; Caymax, Matty; Vincent, Benjamin; Dekoster, Johan; Takeuchi, Shotaro; Nakatsuka, Osamu; Zaima, Shigeaki; Temst, Kristiaan; Vantomme, Andre (2010) -
Growing GaN Epi layers on 200 mm silicon substrates for LED applications
Cheng, Kai; Dekoster, Johan; Jun, Sung Won; Del-Agua-Borniquel, Jose-Ignacio (2011-07) -
Growth and optimization of InGaN/InGaN multiple quantum wells by metal organic vapour phase epitaxy
Liang, Hu; Cheng, Kai; Zhang, Liyang; Leys, Maarten; Sijmus, Bram; L'abbe, Caroline; Dekoster, Johan; Borghs, Gustaaf (2011) -
Growth of high Ge content SiGe on (110) oriented Si wafers
Hikavyy, Andriy; Vanherle, Wendy; Dekoster, Johan; Bender, Hugo; Moussa, Alain; Witters, Liesbeth; Hoffman, T.; Loo, Roger (2011) -
Growth of high Ge content SiGe on (110) oriented Si wafers
Hikavyy, Andriy; Vanherle, Wendy; Vincent, Benjamin; Dekoster, Johan; Bender, Hugo; Moussa, Alain; Witters, Liesbeth; Hoffmann, Thomas Y.; Loo, Roger (2012) -
Growth of high quality InP layers in STI trenches on miscut Si (001) substrates
Wang, Gang; Leys, Maarten; Nguyen, Duy; Loo, Roger; Brammertz, Guy; Richard, Olivier; Bender, Hugo; Dekoster, Johan; Meuris, Marc; Heyns, Marc; Caymax, Matty (2011) -
Growth of high quality InP layers in STI trenches on Si (001) substrates
Wang, Gang; Nguyen, Duy; Leys, Maarten; Loo, Roger; Richard, Olivier; Brammertz, Guy; Dekoster, Johan; Meuris, Marc; Heyns, Marc; Caymax, Matty (2010) -
H2S molecular beam passivation of Ge(001)
Merckling, Clement; Chang, Yao-Chung; Lu, Chung-Yu; Penaud, Julien; El-Kazzi, Mario; Bellenger, Florence; Brammertz, Guy; Hong, Minghwei; Kwo, Raynien; Meuris, Marc; Dekoster, Johan; Heyns, Marc; Caymax, Matty (2011) -
Heavily doping technology for strained Ge1-xSnx layers
Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010)