Browsing by author "Gaubas, Eugenijus"
Now showing items 21-37 of 37
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Lifetime and leakage current studies in shallow p-n junctions fabricated in a high-energy boron implanted p-well
Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Rooyackers, Rita; Badenes, Gonçal; Gaubas, Eugenijus (2000) -
Monitoring of neutron transmutation doped silicon recombination properties by microwave absorption transient techniques
Gaubas, Eugenijus; Vanhellemont, Jan; Simoen, Eddy; Claeys, Cor; Clauws, P.; Kraner, H. W.; Vilkelis, G. (1996) -
On the electrical activity of oxygen-related extended defects in silicon
Vanhellemont, Jan; Simoen, Eddy; Bosman, Gijs; Claeys, Cor; Kaniava, Arvydas; Gaubas, Eugenijus; Blondeel, A.; Clauws, P. (1994) -
On the impact of low fluence irradiation with MeV particles on silicon diode characteristics and related material properties
Vanhellemont, Jan; Simoen, Eddy; Claeys, Cor; Kaniava, Arvydas; Gaubas, Eugenijus; Bosman, Gijs; Johlander, B.; Adams, L.; Clauws, P. (1994) -
Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered structures
Gaubas, Eugenijus; Simoen, Eddy; Claeys, Cor; Vanhellemont, Jan (2000) -
Proton irradiation effects in silicon devices
Simoen, Eddy; Vanhellemont, Jan; Alaerts, André; Claeys, Cor; Gaubas, Eugenijus; Kaniava, Arvydas; Ohyama, Hidenori; Sunaga, H.; Nahsiyama, I.; Skorupa, W. (1997) -
Proton irradiation effects in silicon junction diodes and charge-coupled devices
Simoen, Eddy; Vanhellemont, Jan; Alaerts, André; Claeys, Cor; Gaubas, Eugenijus; Kaniava, Arvydas; Ohyama, Hidenori; Sunaga, H.; Nahsiyama, I.; Skorupa, W. (1997) -
Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si
Gaubas, Eugenijus; Ceponis, Tomas; Mickevicius, Janus; Pavlov, Jonas; Rumbauskas, Valery; Velicka, Marius; Simoen, Eddy; Zhao, Ming (2018) -
Recombination activity of iron related complexes in silicon
Kaniava, Arvydas; Gaubas, Eugenijus; Vaitkus, J.; Vanhellemont, Jan; Rotondaro, Antonio (1995) -
Recombination activity of iron-related complexes in silicon studied by temperature dependent carrier lifetime measurements
Kaniava, Arvydas; Rotondaro, Antonio; Vanhellemont, Jan; Menczigar, U.; Gaubas, Eugenijus (1995) -
Recombination activity of iron-related complexes in silicon studied with microwave and light-induced absorption techniques
Kaniava, Arvydas; Rotondaro, Antonio; Vanhellemont, Jan; Simoen, Eddy; Gaubas, Eugenijus; Vaitkus, J.; Hurd, Trace; Mertens, Paul; Claeys, Cor; Gräf, D. (1994) -
Statistical analysis of shallow p-n junction leakage increase using XTEM results probabilities
Czerwinski, A.; Katcki, J.; Poyai, Amporn; Simoen, Eddy; Claeys, C.; Ratajczak, J.; Gaubas, Eugenijus (2000) -
Statistical analysis of shallow P-N junction leakage increase using XTEM results probabilities
Czerwinski, A.; Katcki, J.; Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Ratajczak, J.; Gaubas, Eugenijus (2001) -
Study of oxygen related recombination defects in Si by temperature-dependent lifetime and EBIC measurements
Gaubas, Eugenijus; Vanhellemont, Jan; Simoen, Eddy; Claeys, Cor; Seifert, W. (1997) -
Study of recombination and transport characteristics in strain-relaxed Si-SiGe layers
Gaubas, Eugenijus; Tomasiunas, R.; Eneman, Geert; Delhougne, Romain; Simoen, Eddy (2005) -
Study of recombination properties of neutron transmutation doped wafers
Gaubas, Eugenijus; Vanhellemont, Jan; Simoen, Eddy; Clauws, P.; Kraner, H. W.; Vilkelis, G.; Smilga, A. P. (1997) -
The response of Si p-n junction diodes to proton irradiation
Simoen, Eddy; Vanhellemont, Jan; Claeys, Cor; Kaniava, Arvydas; Gaubas, Eugenijus (1996)