Browsing by author "Date, Lucien"
Now showing items 21-31 of 31
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Scaling down of MOCVD HfSiON to 1nm EOT
Shi, Xiaoping; Rothschild, Aude; Everaert, Jean-Luc; Van Elshocht, Sven; Date, Lucien; Schaekers, Marc (2007) -
Scaling of high-k dielectrics towards sub-1nm EOT
Heyns, Marc; Beckx, Stephan; Bender, Hugo; Blomme, Pieter; Boullart, Werner; Brijs, Bert; Carter, Richard; Caymax, Matty; Claes, Martine; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Henson, Kirklen; Kauerauf, Thomas; Kubicek, Stefan; Lucci, Luca; Lujan, Guilherme; Mentens, Jimmy; Pantisano, Luigi; Petry, Jasmine; Richard, Olivier; Röhr, Erika; Schram, Tom; Vandervorst, Wilfried; Van Doorne, Patrick; Van Elshocht, Sven; Westlinder, Jörgen; Witters, Thomas; Zhao, Chao; Cartier, Eduard; Chen, Jerry; Cosnier, Vincent; Green, Martin; Jang, Se Aug; Kaushik, Vidya; Kerber, Andreas; Kluth, Jon; Lin, Steven; Tsai, Wilman; Young, Edward; Manabe, Yukiko; Shimamoto, Yasuhiro; Bajolet, Philippe; De Witte, Hilde; Maes, Jan; Date, Lucien; Pique, Didier; Coenegrachts, Bart; Vertommen, Johan; Passefort, Sophie (2003) -
Selective area MOVPE growth of GaAs-based III-V material on 300mm silicon for electronic and photonic applications
Guo, Weiming; Mols, Yves; Langer, Robert; Barla, Kathy; Caymax, Matty; Kunert, Bernardette; Date, Lucien; Bao, Xinyu; Carlson, David; Sanchez, Errol (2015) -
Selective growth of InGaAs on Si(001) by MOVPE: study of strain relaxation, facet formation and their relevance
Guo, Weiming; Waldron, Niamh; Mols, Yves; Veloso, Anabela; Zhou, Daisy; Collaert, Nadine; Thean, Aaron; Langer, Robert; Barla, Kathy; Kunert, Bernardette; Date, Lucien; Bao, Xinyu; Carlson, David; Sanchez, Errol (2016) -
Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)
Guo, Weiming; Date, Lucien; Pena, Vanessa; Bao, X.; Merckling, Clement; Waldron, Niamh; Collaert, Nadine; Caymax, Matty; Sanchez, E.; Vancoille, Eric; Barla, Kathy; Thean, Aaron; Eyben, Pierre; Vandervorst, Wilfried (2014) -
Study of pulsed RF DPN process parameters for 65 nm node MOSFET gate dielectrics
Rothschild, Aude; Kraus, P.A.; Chua, T.C.; Nouri, F.; Cubaynes, Florence; Veloso, Anabela; Mertens, Sofie; Date, Lucien; Schreutelkamp, Rob; Schaekers, Marc (2004) -
Sub-10-9 Ohm.cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation
Everaert, Jean-Luc; Schaekers, Marc; Yu, Hao; Wang, Linlin; Hikavyy, Andriy; Date, Lucien; del Agua Borniquel, Jose Ignacio; Hollar, Kelly; Khaja, Fareen; Aderhold, Wolfgang; Mayur, Abhilash; Lee, JaeYoung; van Meer, Hans; Jiang, Yu-Long; De Meyer, Kristin; Mocuta, Dan; Horiguchi, Naoto (2017) -
Three-dimensional electrical characterization of carbon nanotube-based interconnects at the nanometer-scale
Schulze, Andreas; Hantschel, Thomas; Date, Lucien; Chiodarelli, Nicolo; Eyben, Pierre; Vandervorst, Wilfried (2011) -
Ultra thin plasma nitrided oxides for sub-100nm CMOS
Rothschild, Aude; Veloso, Anabela; Mertens, Sofie; Schaekers, Marc; Cubaynes, Florence; Date, Lucien; Pique, Didier (2002) -
Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications
Veloso, Anabela; Cubaynes, Florence; Rothschild, Aude; Mertens, Sofie; Degraeve, Robin; O'Connor, Robert; Olsen, Chris; Date, Lucien; Schaekers, Marc; Dachs, Charles; Jurczak, Gosia (2003) -
Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation
Yu, Hao; Schaekers, Marc; Hikavyy, Andriy; Rosseel, Erik; Peter, Antony; Hollar, K.; Khaja, Fareen; Aderhold, W.; Date, Lucien; Mayur, A.J.; Lee, J.G.; Shin, Keo Myoung; Douhard, Bastien; Chew, Soon Aik; Demuynck, Steven; Kubicek, Stefan; Kim, Daeyong; Mocuta, Anda; Barla, Kathy; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016)