Browsing by author "Van Landuyt, J."
Now showing items 21-37 of 37
-
In-situ studies of point defect reactions in silicon by high flux electron iIrradiation in a high voltage transmission electron microscope
Fedina, L.; Van Landuyt, J.; Vanhellemont, Jan; Romano, Albert; Aseev, A. (1994) -
Interaction of Ti capped Co thin film with Si3N4
Li, Hua; Bender, Hugo; Conard, Thierry; Maex, Karen; Gutakovskii, A.; Van Landuyt, J.; Froyen, L. (2000) -
Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures
Stuer, Cindy; Van Landuyt, J.; Bender, Hugo; De Wolf, Ingrid; Rooyackers, Rita; Badenes, Gonçal (2001) -
Morphology and defects in shallow trench isolation structures
Stuer, Cindy; Van Landuyt, J.; Bender, Hugo; Rooyackers, Rita; Badenes, Gonçal (1999) -
New intermediate defect configuration in Si studie by in situ HREM irradiation
Fedina, L.; Gutakovskii, A.; Aseev, A.; Van Landuyt, J.; Vanhellemont, Jan (1997) -
Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope
Fedina, L.; Van Landuyt, J.; Vanhellemont, Jan; Aseev, A. L. (1996) -
Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope
Fedina, L.; Van Landuyt, J.; Vanhellemont, Jan; Aseev, A. (1995) -
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon
Simoen, Eddy; Loo, Roger; Claeys, Cor; De Gryse, O.; Clauws, P.; Van Landuyt, J.; Lebedev, O. (2002) -
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques
De Gryse, O.; Clauws, P.; Van Landuyt, J.; Lebedev, O.; Claeys, Cor; Simoen, Eddy; Vanhellemont, Jan (2002) -
Point defect reactions in silicon studied by in-situ high flux electron irradiation in a high voltage transmission electron microscope
Vanhellemont, Jan; Romano, Albert; Fedina, L.; Van Landuyt, J.; Aseev, A. (1994) -
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope
Vanhellemont, Jan; Romano, Albert; Fedina, L.; Van Landuyt, J.; Aseev, A. (1995) -
Quantitative EFTEM study of germanium quantum dots
Hens, S.; Stuer, Cindy; Bender, Hugo; Loo, Roger; Van Landuyt, J. (2001) -
Reliability of copper dual damascene influenced by pre-clean
Tokei, Zsolt; Lanckmans, Filip; Van den Bosch, Geert; Van Hove, Marleen; Maex, Karen; Bender, Hugo; Hens, S.; Van Landuyt, J. (2002) -
Stress analysis with convergent beam electron diffraction around NMOS transistors
Stuer, Cindy; Bender, Hugo; Van Landuyt, J.; Eyben, Pierre (2001) -
TEM studies of processed Si device materials
Vanhellemont, Jan; Bender, Hugo; Van Landuyt, J. (1997) -
The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures
Stuer, Cindy; Van Landuyt, J.; Bender, Hugo; Rooyackers, Rita; Badenes, Gonçal; De Wolf, Ingrid (2000) -
The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures
Stuer, Cindy; Van Landuyt, J.; Bender, Hugo; Rooyackers, Rita; Badenes, Gonçal (2001)